Tunnellinge!ects and electron transport in quantum dot structures

The parameter RS is only effective in the downward-curvature region non-linear region of the forward I–V characteristics at sufficiently high applied voltage, but parameters such as the

In r e a l layered semiconductors and semi- metals, the probability of an electron transition from one layer to another differs f r o m zero; this leads to the dependence of the

INTRODUCTION An exciton gas of sufficiently high density can con- dense in semiconductors a t low temperatures into an electron-hole liquid EHL.'.' This condensation of the excitons