Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor

The materials used in the thin film transistor dielectric are normally insulating materials with high values of dielectric constant (high- κ ) in order to obtain a higher

The role played by the firing process in the film preparation and the crystallite size of HA and BTO on the dielectric constant and structural properties of the films are discussed..

The variations of the dielectric constant, the dielectric loss, and AC conductivity with variation in frequency and temperature for YSZ nanoparticles were analyzed. The

The dielectric properties such as dielectric constant, the dielectric loss and AC conductivity of the Pr 2 O 5 doped borate glass were studied in the diferent frequencies

The dielectric constant and the dielectric loss of the pellets of CeO 2 nanoparticles in disk form were studied at different temperature using a HIOKI 3532-50 LCR HITESTER in

In this study, the complex dielectric constant (the real part of permittivity and dielectric loss tangent) and microwave properties (such as: relection coeicient,

The inluences of dysprosium-doped fraction on the grain size and dielectric properties of barium titanate ceramic, including dielectric constant and breakdown electric ield

We analyse the reflection of a TM electromagnetic field first on a flat dielectric film and second on a Veselago film with negative refractive index, both films being deposited on