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A stochastic algorithm based on fast marching for automatic capacitance extraction in non-Manhattan geometries

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Academic year: 2021

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Figure 1. SEM images of commercial SRAM memories. Non-Manhattan geometries are evident at the microscale.
Figure 2. Influence of sharp corners on the capacitance. Both systems of two electrodes each are isolated so that the capacitance is proportional to the integral of the flux of the electric field along the midline (shown).
Figure 3. Illustration of the preprocessing of a SEM image into an IC pixelization which can be used as input: (A) Original image (top left section of Figure 1)
Figure 4. Left: Synthetic two-dimensional (2D) non-Manhattan model of an IC with M = 5 electrodes and p = 3 nonlayered permittivity regions, showing some labels for illustration
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