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[PENDING] Fabrication and characterization of nanodevices based on III-V nanowires

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Table 1.2. Spontaneous polarization (psp) and piezoelectric constants ( e 31 and e 33 ) of group-III nitrides
Table 1.5 : Tabulated values for Eg(0) and Varshni’s parameters (α and β) specifying the calculated band gap at RT
Figure 2.6 shows SEM image of a p-i-n GaN single nanowire contacted by two steps of e-beam lithography
Figure 2.7 SEM images of nanowires after the whole technological process. a) Multi-contacts along an InP nanowire b) Double contact on a single GaN nanowire
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