• Nenhum resultado encontrado

Current fluctuations in semiconductors in the presence of a quantizing electric field

N/A
N/A
Protected

Academic year: 2024

Share "Current fluctuations in semiconductors in the presence of a quantizing electric field "

Copied!
5
0
0

Texto

(1)

"1t is thereby assumed that the interaction with the thermostat bov. Phys. JETP 12, 1150 (1961).

is sufficiently weak, making it possible to introduce a system 6 ~ . L. Stratonovich, Zh. Eksp. Teor. Fiz. 58, 1612 (1970) energy uniquely determined by the state of the system itself. [Sov. Phys. JETP 31, 864 (1970)l.

'R. L. Stratonovich, Izv. Vuzov (Radiofizika) 13, 1512 (1970).

'G. F. Efremov, Zh. Eksp. Teor. Fiz. 51, 156 (1966) [Sov. 8 ~ . L. Stratonovich, Vestn. Mosk. Univ., fiz. ktron. 5, 16

Phys. JETP 24, 105 (1967)l. (1962).

'G. F. Efremov, Zh. Eksp. Teor. Fiz. 55, 2322 (1969) bov. %. L. Stratonovich, Vestn. Mosk. Univ., fiz. astron. 14, 84

Phys. JETP 27, 1232 (1969)l. (1967).

3 ~ . F. Efremov, Izv. Vuzov (Radiofizika) 15, 12017 (1972). 'ON. A. Krupennikov, Candidate's dissertation, Moscow State

4 ~ . F. Efremov, Candidate's dissertation, Gor'kii, 1973. University, 1974.

5 ~ L. . Stratonovich, Zh. Eksp. Teor. Fiz. 39, 1647 (1960) Translated by P. J. Shepherd

Current fluctuations in semiconductors in the presence of a quantizing electric field

S.

S.

Rozhkov and P. M. Tomchuk

Institute of Physics, Ukrainian Academy of Sciences (Submitted June 22, 1976)

Zh. Eksp. Teor. Fiz. 72, 248-256 (January 1977)

The current fluctuations in a semiconductor are investigated under the conditions for "Stark quantization". It is shown that the fluctuations may be anomalously large. The obtained dependence of the fluctuations on the parameters of the scattering system and on the width of the energy band allow us to reach definite conclusions about the nature of the energy dissipation and band structure of the semiconductor.

PACS numbers: 72.20.Dp, 71.70.Ej

1. INTRODUCTION cording to this theorem the problem of fluctuations r e - A number of a r t i c l e s devoted to the investigation of

semiconductors in strong electric fields have recently appeared. If the electric field is sufficiently strong (and the allowed band is relatively narrow), in such a field the electron is able to reach the top of the allowed band in energy space before being scattered. In such a situation the electron may undergo periodic motion in the Brillouin zone between collision events, which leads to qualitatively new quantum effects which a r e not observ- able in weak fields. The general theory of kinetic phe- nomena in semiconductors in a strong electric field is developed in the a r t i c l e s by Bryksin and Firsov. c1121 In the single-band approximation they obtainedc1] an ex- pression f o r the current in a n a r b i t r a r y electric field and an equation f o r the distribution function on the b a s i s of a diagram technique. A quantum transport equation is presented and also a number of specific physical situ- ationscZ1 a r e investigated. Similar questions a r e con- sidered by Levinson and Yasevichyute inc3], where the quantum kinetic equation is solved and the current is calculated for a model of scattering. It should be noted that the solution of the problem by Levinson and

~ a s e v i c h ~ u t e ~ ~ ~ is of a l e s s general nature than the solu- tion by Bryksin and ~ i r s o d ' ~ ~ ~ since the authors ofc3]

confined their attention to the case of weak electron-pho- non coupling and t o a specific choice f o r the f o r m of the electron band.

It is known that the fluctuation-dissipation theorem is valid f o r a system in thermodynamic equilibrium; ac- 130 Sov. Phys. JETP, Vol. 45, No. 1, January 1977

duces to a calculation of the-linear response of the sys- tem to an external perturbation. T h e r e is no such gen- eralized theorem for nonequilibrium systems, and in each specific case the calculation of the fluctuations r e - quires special consideration. The theory of fluctuations in nonequilibrium electron-phonon s y s t e m s is given in

In these a r t i c l e s current fluctuations were in- vestigated under the quasi-classical condition F>> tiw, where F denotes the average energy of the electron and w denotes the frequency of the fluctuations. High-fre- quency fluctuations in electron-phonon s y s t e m s w e r e in- vestigated inc7].

The present article is devoted to a calculation of the current fluctuations in semiconductors in a strong elec- t r i c field such that quantum effects due to the appear- ance of the "Stark levels"c81 begin to e x e r t influence on the quantum effects. The existence of these levels has been experimentally established. C9r'01 AS f a r a s the authors know, fluctuations under the conditions for quan- tization of the electron longitudinal motion have not been hitherto investigated.

~ a r l i e r [ ~ * ~ ' a method was proposed f o r a calculation of the fluctuations, based on the equations of motion f o r the quantum analog of the microscopic distribution function.

In particular, this method enabled one to introduce out- side sources of fluctuations into the equation f o r the fluctuating p a r t of the distribution function without mak- ing any kind of assumption except those which a r e used in the derivation of the corresponding kinetic equations.

Copyright O 1977 American Institute of Physics 130

(2)

In the present article the spatially homogeneous current fluctuations of a relatively strong transverse electric field E a r e calculated by this method. In this connection the investigation i s valid for low a s well a s high frequen- cies (an exact criterion for the frequency range of the fluctuations will be indicated below). It is shown in this work that Stark quantization significantly changes the na- ture of the fluctuations whose intensity may appreciably exceed the intensity of the equilibrium fluctuations. The investigated fluctuations a r e found to depend on the pa- rameters of the scattering system and on the width of the energy band which allows one to reach definite con- clusions about the nature of energy dissipation and the band structure of the semiconductor.

2. THE HAMlLTONlAN OF THE SYSTEM AND THE CURRENT OPERATOR

Let us consider an electron-phonon system with a weak interaction, located in a strong electric field E . We assume that in equilibrium the c a r r i e r s obey Boltz-

mann statistics. We take the interaction between elec- trons into account by the introduction of self-consistent fields 6E(f) and 6H(t) which a r e due to fluctuations of the charge density and in turn exert influence on the fluctua- tions of the distribution function. In the single-band ap- proximation the Hamiltonian of such a system has the form

where He is the single-band Hamiltonian of the electrons in the electric field, H, is the Hamiltonian of the phonon field, He, i s the Hamiltonian characterizing the interac- tion between electrons and phonons, and H, describes the interaction of the electrons with the self-consistent fields.

The single-band approximation i s valid when one can neglect the effect of interband tunneling, i. e.

,

in the case of narrow allowed bands and rather broad forbidden bands. In this approximation the eigenfunctions of an electron in the crystal in the presence of a uniform elec- tric field E directed along the x axis a r e given byc8'

with an energy

where

Here v denotes the set of quantum numbers n, k, (n is the label on the Stark level and k, ={k,, kJ), a is the smallest lattice vector in the direction of E, e i s the c a r r i e r charge, and &(k) denotes the energy of the Bloch state h ( r ) . In what follows we shall assume that the crystal has a center of inversion. In this case X(k) = O .

In the second-quantization representation we have the following expressions f o r the components of the Hamil- tonian H:

where a:(a,) and bi(b,) denote the creation (annihilation) operators, respectively, f o r an electron in the state v and f o r a phonon with wave vector q , w, denotes the pho- non frequency, C , denotes the matrix element of the electron-phonon interaction, and 3::, = (vl e*"" I v').

F o r a spatially homogeneous system the current oper- ator i s given by

where

ci, i,,

and Hi respectively denote the velocity, coordinate, and Hamiltonian operators f o r the ith elec- tron, and V denotes the volume of the crystal (further- more, we take V = 1).

In the v-representation of operators longitudinal and transverse with respect to the direction of the field E, the coordinates have the form

where

=la

X'L. = 2

5 ' 3

exp (i ( n

-

n f ) ak,) dk,, 2n -*,a eE

By calculating the corresponding commutators in formu- la (I), we obtain the following expression for the cur- rent

3:

J = e

C

vlh.an+ ( k L ) a,,, ( k ~ ,

k,, n, "'

where

""

e+",

=

" \

exp {t (ra - n') ak,) dkz.

2n -=,a

3. FLUCTUATIONS OF THE DISTRIBUTION FUNCTION

The problem of fluctuations is self-consistent. The fluctuating fields 6E(t) and the current fluctuations 6J(t) a r e related by Maxwell's equations. But in order to cal- culate 6J(t) it i s necessary to solve the equation f o r the fluctuations 6f,,. (t) = a:a,.

-

(a:a, ,) of the distribution function. Therefore, f i r s t of all let us find the time de-

131 Sov. Phys. JETP, Vol. 45, No. 1, January 1977 S. S. Rozhkov and P. M. Tornchuk 131

(3)

pendence of 6f,,. assuming the field fluctuations 6E to be was fulfilled.

given. To this end we write down the equation of motion

for the operator a:a,. Let us present the explicit form of BW and Ge,,:

In the present article we consider only fluctuations 6J, ={65,, 65,) which a r e transverse with respect to the direction of E. And also we shall assume that c(k)

= c ( k x )

+

E (k,) in order to not complicate the calculations.

Taking account of the latter leads to a simplication of formula (4) and f o r 65, we obtain

1 d e ( k , )

@ , ( t ) = e - - - 6 f v v ( t ) . u h d k ,

It i s clear from formula (6) that Eq. (5) can be used to determine 65, only at v = v'. Evaluating the commuta- t o r s on the right side of Eq. (5), we obtain the following equation for aia,:

Here and below 1 = (y, 2).

Let us derive the equation for 6f,= bf,, according to the scheme proposed Writing down the equations of motion for operators of the type a h , .be and linearizing these equations with respect to the fluctuating quantities, let us find the time dependence of the operator a:a,,b, to lowest order in the interaction constant C,. We can now write for the operator

the following equation which i s linearized with regard to the fluctuations:

where f v = (aia,,) and j,(t) i s the operator of the extraneous current which appears in the equation a s a consequence of taking account of the initial conditions upon solution of the equations of motion for operators of the type a'av.b,.

The form of j, coincides with the right side of Eq. (71, but the operators a, and b, have a time dependence of the s a m e type a s for noninteracting particles:

{ )

, bq ( 1 ) = bq ( t o ) e x p ( - i o q ( t - t o ) ) .

a. ( t ) = a. ( t o ) erp -

-

In connection with the derivation of Eq. (8) the moment of time to was chosen such that the inequality

Here

1 r3E(k,)

w,':

( a ) = w Z . ( q ) *

wZ

( q ) , vk1=--, h Gk,

where A:, , = E,

-

E , , f Ro, and N, i s the Planck distribu- tion f o r the phonons. The expression f o r A; has a rath- e r cumbersome form and i s therefore not given here. In addition, in the c a s e considered below A: i s an even function of k, and, a s will be evident from the following, does not give any contribution to the current.

Equation (8) was obtained under the conditions

where a,= e ~ a / F i denotes the frequency of the electron vibrations in coordinate and momentum space and

<,

i s

the characteristic frequency of electron- phonon colli- sions. Condition (11) indicates that the quantization of the longitudinal motion i s essential and the Stark levels a r e not washed out by the collisions, and criterion (12) indicates the range of fluctuation frequencies under con- sideration.

4. FLUCTUATIONS OF THE TRANSVERSE CURRENT

As is evident from formula (61, the antisymmetric part of the function bf, gives a contribution to the fluctu- ating current:

We shall assume that the electrons a r e scattered by unpolarized optical phonons. Then in the cases investi- gated by Bryksin and J?irsovE1 f,, is an even function of k, and therefore A: and BW(v) a r e even and odd functions of k,, respectively, and also

ie6Eta

af., w::

(a) [ b f . " ( v ' ) -

--I

tio a k , = 0.

In addition the f i r s t t e r m inside the square brackets in Eq. (8) vanishes. This follows from the fact that in the electric field space remains homogeneous and one can show that (ai(kAa,.(k,)) only depends on the differ- ence n

-

n r . Also bearing in mind that X: =

~ 2 ,

one can easily s e e that the indicated quantity vanishes.

132 Sov. Phys. JETP, Vol. 45, No. 1, January 1977 S. S. Rozhkov and P. M. Tomchuk 132

(4)

After everything that has been said, we obtain the fol- lowing equation for bf :(v):

[ i o + r ; ' ( o ) 16fao(v)

where

1 .

.r;' ( 0 ) =

wPI~

( a ) , jaa(v) = 3 [ ~ a ( n , k , ) - -kJ I.

- LL

-

v ' , q

We note that rtl(w) and

B*

do not depend on n since n ap- pears in WFV, in the form n

-

n' but summation i s c a r - ried out over n'. Here the notation n(k,) = fv i s intro- duced since fv does not depend on the quantum number of the Stark level a s a consequence of the above mentioned property of spatial homogeneity.

Equation (13) is easily solved and we obtain the follow- ing expression f o r the fluctuations of the transverse cur- rent:

Here

a r e the outside fluctuating currents and a,, i s the con- ductivity tensor (1, m = y, z ) which i s given by"

ie' an (kL)

Now let us go on to the calculation of the correlation functions (I ';'I:') since it i s just these quantities which a r e observable, and not the outside currents l,(t). The average values of quantities of the type

a r e needed in order to determine the correlation func- tions of the outside currents. In Eq. (16) all of the op- erators a r e specified at a certain moment of time t, (the choice of to was mentioned above). Neglecting the non- diagonal elements f,,,. = (a:av.) of the density matrix, which a r e small in comparison with the diagonal ele- ments in terms of the parameter

;,/a,,

we obtain the average value of expression (16)

Then with (17) taken into consideration we have

(18) where

Formulas (15) and (18) a r e valid f o r both low and high

frequencies (the exact criterion f o r the range of w i s giv- e n b y h e q u a l i t y (12)). These formulas simplify consid- erably f o r low-f requency fluctuations (w << E). And since in an experiment very often just the low-frequency fluc- tuations a r e measured, it makes sense to present the expressions for a,, and (I,I,,,) for the c a s e of small w :

The kinetic equation f o r n(k,) was utilized in the deri- vation of Eqs. (19) and (20). Thus, f o r example, taking account of the kinetic equation in (8) a s w - 0 gives the equation

a s a result of which Eq. (8) takes a simpler form.

Starting from this equation f o r the function %, one can easily obtain formula (19). Analogous simplifications also occur in connection with the derivation of expres- sion (20) for the correlation function.

The equation f o r n(k,) i s derived under the same as- sumptions that were made f o r the derivation of Eq. (8) from the averaged equation (7) and in the stationary case has the form

Equation (21) and i t s solution were f i r s t found by Bryksin and Firsov. C1rzl

5. THE FLUCTUATION-DISSIPATION THEOREM AND OTHER EXAMPLES

In this section we investigate the consequences of the above derived formulas for the conductivity tensor and for the correlation functions of the outside currents. Up till now the fundamental condition on the entire investi- gation was criterion ( l l ) , which determines the magni- tude of the constant applied electric field. But the width

AE of the allowed band implicitly enters into a l l expres- sions. And different physical situations a r e possible depending on the relationship between the quantities A E and

En,,

and also depending on the relationship between AE, and AE, (AE, denotes the width of the band along the field and AE, denotes the width transverse to the field).

A number of such situations were investigated by Bryk- sin and Firsov, [zl who found the distribution function n(kL) fo r each case.

In the limit of quantizing fields the electrons a r e only scattered inside a single Stark sub-band andcz1

where C i s a constant determined from the normaliza- tion condition, and T i s the temperature of the lattice.

(22) corresponds to thermodynamic equilib- ystem. In this case the fluctuation-dissi-

133 Sov. Phys. JETP, Vol. 45, No. 1, January 1977 S. S. Rozhkov and P. M. Tomchuk 133

(5)

pation theorem, which can be represented in the form

I h o h o

-=- cth -

Real," 2n 2T

should be satisfied. It i s not difficult to obtain formula (23) if only the t e r m s with n' = 0 a r e kept in the summa- tion over n' in Eqs. (15) and (18) and also if the rela- tionship

n ( k , ) ( N , + l ) G ( c ( k , ) - e (k,') -ho,*ho)

=n(kL')N,e'""/'6 ( ~ ( k , ) -e (k,') -ho,*fio)

is taken into consideration.

Now let us investigate the case when fin,<< AE. Then we have

n ( k , ) =C (24)

for the scattering of electrons by unpolarized optical phonons (w,= w,). It i s assumed that Rw,<< &Ex, AE, and AE,- &EL- AE. This i s the so-called c a s e of total warming-up. It i s of no interest due to the fact that f o r frequencies w >>

&

(see Eq. (15) we have

This corresponds to the fact that the plasma frequency tends to zero, and f o r low frequencies, a s i s evident from Eq. (191, a';',= 0 and the ratio

tends to infinity. This implies that the fluctuations in the system a r e anomalously large. In order to deter- mine 0 it would apparently be necessary to determine n(k,) to the next order in RW,/AE, But 0 is easy to cal- culate if the band i s asymmetric: nE, << AE,. In this caseC2]

where

We note that in spite of the Maxwellian form of the function (251, f o r arbitrary frequencies T i s not re- placed by T* in formula (231, but f o r low-frequency fluctuations

134 Sov. Phys. JETP, Vol. 45, No. 1, January 1977

If we assume that fiw,<< T, we obtain an extremely simple expression f o r 9 :

From the last formula it i s quite c l e a r that the fluctua- tions in the investigated system a r e considerably more intensive than the equilibrium thermal fluctuations f o r AE, > Aw,.

Thus, a s follows from formulas (26) and (27), the in- vestigation of fluctuations in strong electric fields allows one to investigate the band structure of semiconductors, and the simplicity of the results significantly offsets the experimental difficulties.

In conclusion we further note that in the present work the problem of a linear response has been solved and the results can be used in problems where there i s a weak alternating electric field in addition to a strong constant field.

The authors express their gratitude to V. V. Bryksin for helpful discussions and also to S. V. Gantsevich and R Katilyus f o r a discussion of the results of this work.

')one can show that all remaining components of the conduc- tivity tensor vanish except a.,

'v.

V. Bryksin and Yu. A . Firsov, Fiz. Tverd. Tela (Lenin- grad) 13, 3246 (1971) [Sov. Phys. Solid State 13, 2629 (1972)l

2 ~ V. . Bryksin and Yu. A. Firsov, Zh. Eksp. Teor. Fiz. 61, 2373 (1971) [Sov. Phys. J E T P 34, 1272 (1972)l.

3 ~ . B. Levinson and Ya. Yasevichyute, Zh. Eksp. Teor. Fiz.

62, 1902 (1972) [ Sov. Phys. J E T P 35, 991 (197291.

' ~ h . M. Kogan and A. Ya. Shul'man, Zh. Eksp. Teor. Fiz.

56, 862 (1969) [Sov. Phys. J E T P 29, 467 (196911.

5 ~ . V. Gantsevich, V. L. Gurevich, and R. Katilyus, Zh.

Eksp. Teor. Fiz. 57, 503 (1969) [Sov. Phys. J E T P 30, 276 (1970)l.

9. M. Tomchuk and A. A . Chumak, Institute of Physics, Ukrainian SSR Academy of Sciences, Preprint No. 9, 1971.

IP. M. Tomchuk and A. A . Chumak, Ukr. Fiz. Zh. 18, 1625, 1822 (1973).

'E. 0. Kane, J. Phys. Chem. Solids 12, 181 (1959).

's.

Maekawa, Phys. Rev. Lett. 24, 1175 (1970).

'OR. W. Koss and L. M. Lambert, Phys. Rev. B5, 1479 (1972).

Translated by H. H. Nickle

S. S. Rozhkov and P. M. Tornchuk 134

Referências

Documentos relacionados