Trabalhos Futuros

1) A obtenção das análises Raman e FTIR para as células fotovoltaicas dos conjuntos 2 e 3 para identificar as incorporações de H e a cristalinização das estruturas, para um melhor entendimento da caracterização elétrica dos dispositivos fabricados;

2) A execução de mais recozimentos térmicos em 450ºC, em ambiente de gás verde, por intervalos de 5 minutos em 5 minutos, intercalados com medidas I-V, para identificar se os parâmetros elétricos, especialmente a eficiência das células, melhoraram com a passivação das ligações incompletas;

3) A fabricação de transistores de filmes finos baseados em a-Si:H com as regiões de fonte e dreno dopadas através da difusão de Al, desenvolvida neste trabalho.

4) A obtenção de uma melhor caracterização dos próprios filmes de a-Si:H, com as extrações da energia do band gap, a concentração, o tempo de vida e a mobilidade de portadores.

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