Até o presente momento fabricamos capacitores CMOS com dois diferentes tipos de dielétricos (SiO2 e SiOxNy) e três diferentes tipos de eletrodos (Poli-Si n+, NiSi e Al).
Pretende-se dar continuidade ao trabalho utilizando esses eletrodos na elaboração de capacitores MOS, transistores MOS, planar e 3D, buscando otimização dos processos e verificação dos limites mínimos de espessuras.
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