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A critical analysis of the quantum point contact model of conduction in Ta2O5-based resistive switching memories

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Academic year: 2021

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Table 1.1 Best projected quality parameters for multiple categories of ReRAMs
Figure 1.3 Schematic
Table 1.2 Current density expression and its electric field and temperature dependency of commonly reported conduction mechanisms in RS devices
Figure 1.4 Energy band diagram displaying: (1) Schottky emission; (2) P-F emission; (3) NNH; (4) Direct tunnelling
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