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The Temperature Dependene of Critial Current

in YBa

2 Cu

3 O

7 d

Thin Films Deposited

on MgO by an Elipse PLD

Masato Ohmukai,Takehiro Fujita,and Takayuki Ohno

Department ofEletrialEngineering,

Akashi CollegeofTehnology, Akashi,Hyogo 674-8501,Japan

Reeivedon19April,2001

YBa2Cu3O

7 d

thin lmswere deposited on MgO single rystals by means of an elipse pulsed

laserdeposition(PLD)method. Adepositedlmexhibitedtheritial temperatureof74K.The

dependeneofritialurrentontemperaturewaswellexplainedbytheGinzburg-Landautheory.

Althoughthetheoryisdesribedonlynearritialtemperature,experimentalresultsarewelltted

inawiderangebetween25Kand74K.ItstemsfromthestronglyJosephson-ouplingregime.

I Introdution

Reently the YBa

2 Cu

3 O

7 d

(YBCO) thin lms have

been applied to superonduting devies suh as

Josephsonjuntions[1,2℄,uxowtransistors[3,4℄,

su-peronduting quantum interferene devies (SQUID)

[5℄. YBCOthinlmsaremoreandmoresigniantfor

eletroni deviesnowadays. Itisof importane to

in-vestigate fundamental properties of YBCO thin lms:

theritialtemperatureandtheritialurrent.

Researhershavehallengedavarietyoffabriation

tehniquestodepositYBCOthinlmssinethe

disov-eryofthematerial. Amongthesedepositiontehniques,

sputteringandpulsedlaserdeposition(PLD)are

possi-blythemostpromisingdepositionmethods. In

sputter-ing, there isaproblem in priniple; resputtering. The

resputteringisausedbyoxygenanionsgeneratedina

sputtering hamber. Thegeneration of oxygen anions

is inevitable beauseYBCO is an oxide material. On

theother hand,PLDis freefromresputteringbeause

of theabseneofeletrield inthehamber,but

an-other problem of a droplet should be onsidered. A

droplet, abig luster of atoms or ions, deteriorates a

deposited lm. Inorderto avoidthedeterioration, an

elipse PLDmethodiseetive[6℄.

In this artileYBCO thin lms were deposited on

MgOsubstratesbyanelipsePLD.Thedependeneof

ritial urrent on temperature was investigated after

patterningof theYBCOlmswasperformed.

II Experimental details

A ommerially available stoihiometri single target

wasused;25mmindiameterwithathiknessof2mm.

diation. AKrFeximerlaserwasusedfortheablation,

whihosillatesat246nm. Theoutputenergyand

rep-etitionfrequenywas100mJand8Hz,respetively.

A(100)MgOsinglerystalwasusedasasubstrate.

Thesubstratewaspreparedinthe formofasquare of

100mm 2

with a thiknessof 2mm. MgO havebeen

widely used as a substrate for YBCO thin lms

re-gardlessof large mistof 7.7%, beause the dieletri

propertiesareexellent;lowdieletrionstantandloss

tangent. Thesubstratewasleansedinaetoneandin

ethanoloneafteranotherrepeatedlyusinganultrasoni

leaner. Aleansedsubstratewasdriedinairandputin

thedepositionhamberinsuhawaythatthesubstrate

wasparallelto thetarget(on-axisonguration). The

substrate wasgripped with a sampleholder on whih

an SiC heater was mounted. The substrate

tempera-turewaselevatedupto 740 Æ

Cduring the deposition,

whihwasmonitoredwithathermooupleattahed to

thesampleholder.

The deposition hamber was evauated to 3*10 6

Torrwithaturbopump. Thedepositionwasperformed

underanoxygen atmosphereforanhour. The

deposi-tiontime orresponds to the lm thikness of 90 nm.

Afterthe deposition the hamberwas lled with

oxy-gengas. Thesubstratewasooleddowninthehamber

slowly to 400 Æ

C for 30 min. and then to room

tem-peraturenaturally. Thetreatmentmakesusto omita

post-depositionanneal inanoxygenatmosphere.

Deposited lms were patterned to be in the form

depitedshematially in Fig. 1. The patterning was

performedbyahemialethingwithaphosphoriaid

(2)

Figure1. AnillustrationofpatternedYBCOlms.

Chem-ialethingwasperformedwithphosphoriaid.

The resistivity and I-V harateristi of the

de-posited lm were obtained by an ordinary four-port

method. Thetemperaturedependenewasobtained

us-ingaliquidheliumryostatandaomputerontrolled

heaterattahedtothesampleholder. Theritial

tem-peraturewasdened asthat wherethegradientofthe

resistaneto temperatureisatmaximum.

III Results and disussion

An x-ray diration pattern of the deposited YBCO

lmsshowed ten(00I) peaks from YBCO aswell as a

strongpeak(2=42.8degree)orrespondingtoanMgO

substrate. Theresultsindiatedthatthelmis

prefer-ably oriented in the manner that axis is normal to

thesurfae. Thelmthiknesswas90 nm,whihwas

determinedbyaneedle-ontat-typethiknessproler.

The temperature dependene of the resistivity is

showninFig. 2. Theresistivityisalulatedinluding

thedimensionoftheethedlm. Thegureshowsthat

the transition ours steeply at 74 K. It indiates the

existene ofonly one phase. Theoxygen deienyis

estimatedtobe0.37basedonthedatareported

previ-ously[7℄.

Figure 2. A temperature dependene of resistivity. The

TheI-Vharateristiwasmeasuredbetween25K

and 72 K. Typial results (T=25 K, 50 K,65 K,and

72 K) areshown in Figs. 3-6. Eah gureshowsthat

whentheurrentissmallthevoltageiszero. The

fea-tureindiatesthatthesuperondutingurrentours.

Iftheurrentreahesaritialurrent,forexample42

KforT=50K,avoltageinreaseswithouttheurrent

inrease. Theourreneofvoltage dropindiates the

break of thesuperonduting state. The feature is of

theaseregardlessofthediretionoftheurrentfrom

thefatthat thedataissymmetrialattheorigin.

Figure3. TheI-Vharateristi atT=25K.

(3)

Figure6. TheI-VharateristiatT=72K.

Asthetemperaturebeomeshigher,theritial

ur-rent beomes smaller as is obtained from the gures.

Therelationbetweentheritialurrentand

tempera-ture isplotted with losed irlesin Fig. 7. It learly

showsthat the ritialtemperaturemonotonially

de-reasewiththetemperature. Asolidlineinthegureis

drawnonthebasisofthe Ginzburg-Landau(GL)

the-ory,whih statesthat theritialurrentisin

propor-tionto(1-T/T) 3=2

. T meanstheritialurrentand

aoeÆientisan adjustableparameter. Theobserved

dataagreewellwiththetheory,whentheoeÆientis

225mA.

Figure 7. Thetemperaturedependeneof theritial

ur-rent. Closed irlesare obtained from the experiment. A

solid line was drawnonthebasis of theGinzburg-Landau

theory.

J.R. Clem et al. have reported that granular

superondutors show the rossover eet between

Ambegaokar-Barato (AB) and GL temperature

de-pendene onritialurrentdensity [8℄. TheAB

tem-peraturedependene,thattheritialurrentisin

pro-portionto(1-T/T),isbasedontheweaklyJosephson

oupledregime andobservedin granular

superondu-tors. TheABdependeneshowsonvexoneinthe

rit-ialurrentdensityasafuntion oftemperature. The

dependene is observed under the rossover

tempera-ture. From the rossover temperature up to the T,

GLdependeneisobservedwhereurrent-induedgap

suppressionisdominant.

Therossoverhasbeenalsoreported in YBCO

e-in the rossovertemperature with the derease of the

T. WhentheTisunder80Ktherossoveroursno

higherthan10K.TheTisdeterminedbytheoxygen

deieny. As theoxygen deieny isstrong, the

o-herenelengthbeomessmallfollowedbythederease

oftherossovertemperature. Forinstane, an YBCO

samplewiththeoxygendeienybetween0.2and0.25

showed the superonduting transition at 80 K where

therossovertemperaturewassituatedbetween10and

20K. The oherene lengthwas 1nm and thesize of

superondutingdomainis around1nm.

The literature treated the YBCO lms deposited

on SrTiO

3

and LaAlO

3

substrates. The lattie

mis-mathwithYBCOlmsislessthan3%. Inthisartile

theMgOsubstratewasusedwhoselattiemismathis

7.7%.Thedisussionintheliteratureisonsistentwith

ourresults that YBCO lms withT of 75 Kshowed

Ginzburg-Landau temperature dependene in a wide

range. ItimpliesastronglyJosephson-ouplingregime

wherethe size of superonduting domain is lessthan

1nm.

IV Conlusions

YBCOthin lmsare deposited onMgO substratesby

means of an elipse PLD method. The YBCO lms

werepatterned bymeansofhemialething by

phos-phori aid with the help of photolithography. The

I-V harateristi was measured, from whih

temper-aturedependene of theritialurrentwasobtained.

Thedependene isin an exellentagreementwith the

Ginzburg-Landautheoryoverarangebetween25Kand

72 K. It stems from the strongly Josephson-oupling

regime.

Referenes

[1℄ J.E.Zimmerman,J.A.Beall,M.W.CromarandR.H.

Ono,Appl.Phys.Lett.51,617(1987).

[2℄ M.S.Collough, C.E. Gough,M.Keene,C.M.

Muir-head,N.Thomas,J.S.AbellandS.Sutton,Nature328,

47(1987).

[3℄ K.Miyahara,S.KuboandM.Suzuki,Appl.Phys.Lett.

76,4772(1994).

[4℄ K.Miyahara, S.Kuboand M. Suzuki, J. Appl. Phys.

75,404(1994).

[5℄ R.H.Koh,C.P.Umbah,G.J.Clark, P.Chaudhari

andR.B.Laibouritz,Appl.Phys.Lett.51,200(1987).

[6℄ K.Kinoshita, H. Ishibashi and T. Kobayashi, Jpn. J.

Appl.Phys.33,L417(1994).

[7℄ M.Ohmukai,T.FujitaandT.Ohno,Braz.J.Phys.31,

30(2001).

[8℄ J.R. Clem, B.Bumble, S. I.Raider, W.J. Gallagher

andY.C.Shih,Phys.Rev.B35,6637(1987).

[9℄ H. Darhmaoui and J. Jung, Phys. Rev. B53, 14621

Imagem

Figure 2. A temperature dependene of resistivity. The
Figure 6. The I-V harateristi at T=72 K.

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