2077-6772/2012/4(2)02023(5) 02023-1 2012 Sumy State University Analytical Modeling of SON MOSFET and Realization Inverter Circuit for
High Speed and Ultra Dense Low Power Circuits
Kousik Naskar*, C.J. Clement Singh, Subir Kumar Sarkar
Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata-700032, India
(Received 10 February 2012; published online 04 June 2012)
In the recent years, there has been considerable interest in the realization of high speed, small-size and low-power consuming devices and systems. As a consequence, the search for new principle of operation of the small-size, high speed and low-power device is becoming more and more important. In our earlier paper, it has been established that SON technology, not only improve the dc performance with reduce a short-channel effect and threshold voltage, it also improves the frequency response due to improvement in conductance and reduced parasitic effect. Further, it is already in our knowledge that SCEs are suppressed in dual material gate MOSFETs because of the perceivable step in the surface-potential profile, which screens the drain potential. The concept of dual material gate has been applied to SON MOSFETs struc-ture and the feastruc-tures exhibited by resulting new SON strucstruc-ture has been examined for the first time by developing an analytical model and the result agree well with the MEDICI simulation values. In order to substantiate the merits of the proposed SON MOSFETs, a MOS Inverter is realized using the SON MOSFETs and its performance is investigated as an aid to the high-speed, ultra-dense and low-power cir-cuit related work.
Keywords: SON, SOI, Dual Material Gate, MEDICI, Inverter, Short Channel Effects.
PACS numbers: 84.30. – r, 85.30.De, 85.40.Bh, 85.40.Qx,
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1. INTRODUCTION
Continuous progress in semiconductor technology has enabled the relentless evolution of electronics, in-formation technology and communication [1-3]. It is evi-dent that power consumption, leakage issues, scalability and noise immunity will be the bench mark for future devices in VLSI circuit design. Since the speed of MOSFET is intrinsically limited by the carrier transit time, the most obvious approach to improve the device speed is to reduce the gate length [4-6]. When the gate length is aggressively scaled, the gate begins to lose con-trol over the channel and the parasitic condition results in saturation, possibly in a reduction of transconduct-ance and in an increase of drain conducttransconduct-ance [7-10]. It has already been established that under sub 100 nm regime, conventional MOSFET scaling concepts will be confronted with physical limitations-the lattice constant of Si. The major problems of scaling down the conven-tional MOSFETs include: (a) quantum mechanical tun-nelling through the thin gate oxide, from source to drain and from drain to body; (b) threshold voltage control in-duced by random doping effects; (c) short channel effects (SCE) and mobility degradation; and (d) process control of thin layer uniformity and accurate lithography and implantation. In order to extend the lifetime of the Si-based CMOS technology, devices with new structures and/or new materials need to be considered [11-15]. Sev-eral performance boosters have been proposed in the literature and the International Technology Roadmap for Semiconductor (ITRS) suggest that one or more tech-nology boosters may be required for devices beyond the 45 nm technology node in order to sustain the increase of intrinsic device speed [16]. Continuous down scaling of bulk MOSFET produces strong short channel effects and consequently a high leakage current which limits farther miniaturization of MOSFET [17-20]. Major issue with
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§=§×§è§Ýúnö§ §
2.5 Power dissipation §
♌§﹘§♌î§⬸莸§裔裔﹘⬸§ ﹘裔§ §⊰⬸뀐⬸ð ĺ§㘬§Ű締﹘뀐⊰§⬸莸§裔裔﹘⬸î§裔 ⬸§⊰⊰蟠§ ⬸莸§裔裔﹘⬸§﹘§裔﹘⊰§⬸莸§裔裔﹘⬸§×﹘㘬﹘§ ﹘§裔蟠ð 裔 ⬸§﹘㘬﹘Ýö§㔤 § §§裔§§ §⬸ §裔§裔﹘§裔﹘§×�§⬸§�ݧ §裔§⬸締§裔﹘ð ⊰§⬸莸§裔裔﹘⬸§莸 ⊰ §裔§⊰⬸蟠裔§裔裔§ ﹘§nĀ§Å§ ⬸ § §⬸﹘§⬸莸§裔裔﹘⬸§⬸ § §§ⷌĐĐ祜ö§ § 締﹘뀐⊰§⬸莸§裔裔﹘⬸§×莸 ⊰ §裔§ §뀐⬸裔§裔 ð ⊰﹘§⊰⬸蟠⬸§⬸ §⬸莸§裔裔﹘⬸ݧ⬸⊰⊰蟠§蟠§ ⊰ ﹘§⬸ §裔﹘§×�§⬸§�§⬸§�§⬸§�Ýö§ §裔 ⬸§ ⊰⊰蟠§⬸莸§裔裔﹘⬸§裔§⬸§⊰締§﹘§⬸§♌ð î§﹘ §§⬸⊰⊰蟠裔§蟠§⬸§⬸§﹘§蟠§⬸§⬸蟠蟠§ 裔﹘§莸 § §⬸裔§﹘§ ﹘§뀐裔§ⷌĐn祜ö§⊰§莸§ ﹘§⊰⬸⬸﹘§§⬸蟠§⊰﹘⊰蟠﹘⬸§締﹘뀐⊰§﹘§裔﹘⊰§ 裔裔﹘⬸§⬸締§﹘§⬸§ §裔 ⬸§⊰⊰蟠§⬸莸§ 裔裔﹘⬸§ⷌĐĖðĐĢ祜ö§
㔤 §Ű締﹘뀐⊰§⬸莸§裔裔﹘⬸ĺ§
§ §
(
)
n Ā n Ć ö⬸蟠
⬸蟠 �삐
⬸蟠
⬸蟠 �삐
♄ ♄
é æ ö
= ê ç- ÷ +
è ø
ë
ù
æ ö
+ - ç ÷ ú
è ø û
ò
ò
§ §
§
斜﹘⊰§⬸莸§⬸§﹘㘬﹘§⬸莸ĺ§
§
é ù
-é ù æ ö
= ê úê - ç ÷ú
ê ú
ë ûë è øû
Ť
Ť Ť
× Ý
裔 Ć 裔
㘬
䀔 䀔
㘬
§ ĀnĀnĐðĖ§
3. RESULT AND DISCUSSION §
⬸§裔蟠締§ §﹘﹘﹘裔§⬸ §斜�§⊰§§﹘§斜�♌§ ﹘§Ū䡠�斜§⬸⊰§⊰⊰蟠î§斜�§﹘裔§§⊰⊰蟠§裔§ 裔蟠§締§⬸§ §﹘﹘締⊰﹘§뀐⬸§⬸ §斜�§ð ⊰ö§♌§ §裔§莸⬸㘬§î§ § ⊰裔裔§⬸ §蟠﹘§뀐﹘ð ﹘§﹘§ ﹘裔§§﹘§⬸§ §斜�§䡠�斜Ŷ§ 裔蟠⊰蟠§﹘§ § ﹘蟠裔§裔 ⬸莸§締§ §⬸⬸裔§ 裔蟠⊰蟠§ ﹘§§ ﹘뀐§締§ § 裔§뀐§ð ⬸§﹘§nۧ﹘﹘締⊰﹘§뀐⬸§﹘§§裔§ § ﹘§ § 裔蟠§⬸﹘§ ⬸뀐§ §⬸⬸裔§뀐⬸§﹘§莸§ 莸 § §䡠ŶŰ♌Ū♌§裔뀐蟠﹘⬸§裔蟠裔ö§♌§﹘裔⬸§뀐 ﹘ð 裔§ ﹘§ §⬸⬸裔§裔蟠⊰蟠§﹘裔§⬸§蟠⊰§ 斜ŪŶ裔î§﹘裔§ §裔蟠 ﹘⊰§⬸﹘§⬸ §裔 ⬸莸裔§﹘§裔§﹘§ § ﹘⊰§⬸ § §莸⬸§뀐﹘§莸 ⊰ §蟠⊰§﹘§⊰⬸ð 蟠⊰﹘⊰§﹘§Ű♌Ťö§ §⬸莸§⊰⬸裔蟠뀐⬸§⬸ §斜�§ ﹘裔 § §裔 § ⬸蟠 §⬸ § §ĜönĢ §Å §⬸莸 § ﹘ §斜�♌ § ﹘裔§§﹘§ĐĖöĀĮ§Å§⬸莸§ ﹘§Ū�䡠斜§ö§ §裔﹘§﹘裔뀐裔裔⬸§뀐§裔§ĜönĨ§Å§裔裔§ ﹘§斜�♌§ ﹘裔 § §﹘ §ĐĖönĀ §Å §裔裔 § ﹘ §Ū䡠�斜ö §⬸﹘ §⊰﹘ð ﹘⊰﹘⊰§裔§ §﹘裔§ ⬸§斜�§﹘裔§§﹘뀐⬸§ § §裔뀐﹘§§⊰⊰蟠裔ö§
§
Fig. 4 – ♌ð斜§Ū蟠§ ⬸§ §§
§
ö§Ė§裔裔§ §♌ð斜§⊰ ﹘﹘⊰裔⊰裔§⬸ §斜�§ 䡠�斜Ŷ裔 § ﹘裔 § ⬸ § ⬸蟠裔 §⊰﹘⊰蟠﹘⬸裔 § ﹘ § 斜�♌ § 䡠�斜Ŷ裔§﹘§⬸⬸뀐§뀐﹘蟠§ ⬸§﹘§﹘§⬸﹘§ ﹘§Ā§⬸§n§⬸ö§Ş§裔 ⊰﹘§﹘§⊰蟠§ ﹘⊰ð 뀐§§斜�§䡠�斜Ŷ裔§裔§⬸裔§⊰⬸뀐﹘§⬸§蟠㘬§ 䡠�斜Ŷ裔§裔§⬸裔§莸 ⊰ §﹘ ⊰裔§ §⊰⊰蟠§ ⊰ð ⊰締§§Ū䡠�斜§⬸⊰§⊰ 䀔蟠裔ö§
§裔莸⊰ §Ū ﹘﹘⊰裔⊰裔§ ⬸§﹘§斜�§﹘裔裔§ð §×ö§Ćݧ﹘§⊰§§ö§Ĝö§♌§﹘﹘裔§ ﹘§ 斜�§﹘裔§§裔§ ﹘裔§ ﹘§Ū䡠�斜§§§﹘§ 斜�♌§ö§
ö§Ģ§§裔 ⬸莸裔§ §﹘﹘⬸§⬸ §⬸莸§裔裔﹘⬸§莸 § 䀔蟠⊰締§⬸ § §蟠§裔﹘ö§♌§﹘﹘裔§ ﹘§ §⬸莸§ 裔裔﹘⬸§裔§⬸莸§ ⬸§斜�§﹘裔§§⊰⬸뀐﹘§⬸§ Ū䡠�斜§§﹘§斜�♌§ö§♌§⬸§⬸§裔﹘裔 § § ⬸뀐﹘⊰§裔蟠뀐﹘⊰締§⬸ § §裔§斜�§﹘裔§§ ﹘§﹘§Ć§裔§⬸§⊰§﹘⬸蟠裔§﹘﹘뀐裔ö§締⊰﹘§ ﹘﹘뀐裔§蟠裔§ ⬸§裔蟠⊰ § ⬸뀐﹘⊰§⊰⬸뀐﹘裔⬸§﹘ĺ§ 㔤§=§Ć§뀐⊰⬸§뀐=§ĆnĀ§﹘⬸§뀐î§♄⬸ §=§ĖĖöĖĜ§﹘ö§§
斜뀐﹘締§﹘§Ť﹘§⊰ ﹘§裔§﹘裔⬸§§§ö§Ĩ§⬸§裔蟠ð ﹘§ § ⬸뀐﹘⊰§﹘﹘⬸§⬸ § ⊰蟠§⊰裔§﹘§ §﹘裔§⬸§ ⬸裔§⊰裔ö§
§
§
§
§
Fig. 5 – 斜뀐蟠﹘裔§ §裔莸⊰ §⊰ ﹘﹘⊰裔⊰裔§ ⬸§ §斜�ð ﹘裔§§
§
§
§
Fig. 6 – 䀔蟠⊰締§裔⬸裔§⬸ §裔§
§
§
§
Fig. 7 –§Ť﹘§⊰ ﹘§裔 ⬸莸§⬸莸§裔裔﹘⬸§﹘§⬸﹘﹘⬸§
Ű﹘締§ ⬸§﹘⬸蟠裔§締裔§⬸ §§
§
Table 1 –§Ū﹘⊰蟠﹘§ú裔뀐蟠﹘§﹘﹘뀐裔§ ⬸§§莸 §
§⊰§裔蟠⊰蟠§裔⊰ 뀐§
§
Ű⊰§ 裔 ⬸§ ⬸﹘§
×ݧ
⬸莸§ð ⊰﹘﹘ð⬸§
ĆĀ§Ờ § 䀔蟠⊰締§ ×뀐⊰⬸§莸﹘ݧ
⬸﹘ð ﹘⬸§
﹘締§ ×⊰⬸§裔⊰ݧ
⬸﹘§⊰﹘﹘⊰ð ﹘⊰§
× Ý§
䡠�斜§ ĀönĜĀЧ ĆĖĀöĴƧ ĐöĜĐĜ§ nöĮĢĜ§´§ĆĀ§§Ĵ§
斜�♌§ ĀöĆĴnĢ§ ĆĆĀöĢn§ nöĨĨЧ nönĆĴ§´§ĆĀ§§Ĵ§
§
§ ĀnĀnĐðĜ§
Table 2 –§⬸莸§裔裔﹘⬸§﹘§⬸﹘﹘⬸§﹘締§⬸ §§
⬸§﹘⬸蟠裔§⊰§﹘﹘뀐§
§
Ű⊰§ § ﹘§©§Ć§ ĆĀ§´§ĆĀnƧ
§
§©§ĜĀ§ ĐĐĀ§´§ĆĀ§§Ĵ§
§
⬸ §©§§ nöĜ§§ĮöĜ§´§ĆĀ§§Ĵ§
裔§©§ĐĀ§ ĴĀ§´§ĆĀ§§Ĵ§
§
䡠�斜§ ⬸莸§ ×뀐㔤ݧ
ĜĴĢöĢƧ §ĢĀĀöĆĴ§
ĨĜĮöĮƧ §ĨnĮöĆn§
nĢĖöĆĖ§ §nĢĢöĐЧ
ĢĆĀönĖ§ §ĢĆĖöĆЧ Ű﹘締§
×斜ݧ
nönĆЧ §nönĀĀ§
nöĢĢĜ§ §nĨĨĨ§
ĀöĴĮĖ§ §ĀöĴĨĢ§
nöĐĀЧ §nönĮĮ§ 斜�♌§ ⬸莸§
×뀐㔤ݧ
ĖĴnöĆЧ §ĖĴĖöĢЧ
ĜĴnöĀƧ §ĜĨĀöĢĖ§
nĢĨöĮЧ §nĢĴöĜЧ
ĖĮĀöĢĀ§ §ĖĮnöĴЧ Ű﹘締§
×斜ݧ
ĆöĨĢƧ §ĆöĨĜn§
ĆöĴĴĀ§ §nöĀĢĜ§
ĀöĴĜĜ§ §ĀöĴĖĴ§
ĆöĨĐƧ §ĆöĨnn§ 斜�§ ⬸莸§
×뀐㔤ݧ
ĖĢĴöĨĮ§ §ĖĨĆöĴn§
ĜĴnöĖĜ§ §ĜĨĖöĆĜ§
nĢĜöĆƧ §nĢĮöĀĖ§
ĖĨĮöĀĴ§ §ĖĮĀöĮƧ Ű﹘締§
×斜ݧ §
ĆöĢĨĀ§ §ĆöĢĢn§
nöĀĆĴ§ §nöĀĮĖ§
ĀöĴĐĮ§ §ĀöĴnĮ§
ĆöĨĆĖ§ §ĆöĨĀĖ§ §
4. CONCLUSION §
♌§ §裔§莸⬸㘬§莸§ ﹘§蟠裔§⬸蟠§﹘﹘締⊰﹘§뀐⬸§ ⬸§斜�§䡠�斜Ŷ§﹘§裔 ⬸莸§裔§裔蟠뀐﹘⊰締§⬸§⬸ § ⊰§㘬§斜�♌§﹘§Ū䡠�斜§⊰裔ö§㔤§ ﹘§뀐⬸締§
⬸§斜�§뀐⬸§⬸§﹘§﹘§§﹘§裔蟠§
Table 3 –§Ū⬸뀐﹘﹘§裔蟠締§⬸ §裔裔﹘⬸î§﹘締î§⊰﹘﹘⊰﹘⊰§
裔⊰§⬸§斜�§﹘裔§§
§
Ű⊰§ ⬸莸§Ű裔裔﹘ð ⬸§×䡠⊰⬸§
㔤﹘ݧ
⬸﹘﹘⬸§ Ű﹘締§×⊰⬸§
裔⊰ݧ
⬸﹘§Ū﹘﹘⊰ð ﹘⊰§×ݧ 斜�§ ĆĀĜöĀĴ§§ nöĢĐĖ§§ nöĆĀĖ§´§ĆĀ§§Ĵ§
斜�♌§ ĜönĢ§Å§§䡠⬸§ ﹘§斜�§
ĜönĨ§Å§䡠⬸§ ﹘§斜�§
ĜöĖĢ§Å§䡠⬸§ ﹘§斜�§ 䡠�斜§ ĐĖöĀĮ§Å§§
䡠⬸§ ﹘§ 斜�§
ĐĖönĀ§Å§䡠⬸§ ﹘§斜�§
ĐĢöĆĢ§Å§§ 䡠⬸§ ﹘§斜�§
§
裔§ ⬸뀐﹘⊰§莸 §斜�♌úŪ䡠�斜§ö§ §뀐﹘⊰§ ⬸ §蟠⊰ §斜ŪŶ裔 §⬸ § § ⬸뀐﹘⊰ §⬸ §ĆnĀ §뀐 §斜� § 䡠�斜Ŷ裔§⊰⊰蟠裔§裔§裔﹘§ §蟠裔§ §ð ⬸§﹘﹘締⊰﹘§뀐⬸§⬸ §斜�§䡠�斜Ŷ裔§⊰裔ö§斜ð ⊰﹘§ ﹘⊰뀐§§ §⊰⊰蟠§ ⬸뀐﹘⊰§裔§ð ⊰§ ⬸§斜�§﹘裔§⊰⊰蟠§ 締§⬸ §뀐⬸§﹘ð ﹘﹘裔§ ⬸§⬸莸§⬸莸§斜♌§⊰⊰蟠ö§
§
ACKNOWLEDGEMENT §
Űö§斜蟠§㫴蟠뀐﹘§斜﹘㘬﹘§斜﹘㘬﹘§ ﹘㘬 蟠締§﹘⊰㘬⬸莸ð 裔§ ⬸§ ﹘⊰﹘§裔蟠⬸§⬸﹘§ ⬸뀐§斜�§ŰŰ�ö§
REFERENCES §
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nö ö§﹘﹘締ö§Ū ﹘﹘㘬﹘裔﹘ö§㘬⬸⊰î§﹘♌﹘
♄⊰蟠裔삐裔裔⊰î§斜⊰⬸�⬸î§ ×⊰§
﹘ĺ§ĆĴĴĢÝö§
Đö ö§î§斜ö§䡠⬸ ﹘締î§斜ö§Ū裔⬸⬸﹘蟠î§ö§斜㘬⬸⊰㘬î§♌��� �⊰§51î§nĖĀ§×nĀĀĖÝö§
Ėö 斜蟠§ 㫴蟠뀐﹘§ 斜﹘㘬﹘î§ 斜﹘⬸締§ Űî§ ö§Ť﹘裔﹘﹘§ 斜 î§ Ű﹘§ Ű﹘裔î§䡠﹘斜⊰삐♌﹘⬸蟠﹘§7î§♌裔裔蟠§Ć§ ×nĀĆĆÝö§
Ĝö 斜﹘⬸締§Űî§ö§Ť﹘裔﹘﹘§斜 î§Ű﹘§Ű﹘裔ö㫴ö§Űî§斜蟠§ 㫴蟠뀐﹘§斜﹘㘬﹘î§♌�⊰⬸§98î§ĆĖĢĜ§×nĀĆĆÝö§
Ģö 㫴ö§⬸締î§ 斜ö§䡠蟠㘬 ⬸﹘ 締﹘締î§ ö§䡠﹘ 뀐⬸⬸ð䡠뀐﹘î§ ♌���§91î§ĐĀĜ§×nĀĀĐÝö§
Ĩö 斜﹘﹘裔§Ờ ⬸裔 î§㫴 ⬸뀐﹘뀐§⬸裔⬸§斜 î§斜﹘﹘締§Űî§ 斜蟠§㫴蟠뀐﹘§斜﹘㘬﹘î§﹘⬸䠰�⊰⬸ 締裔§3§⬸§Ćî§ĜĢĴ§ ×nĀĆĆÝö§
Įö 㫴ö§⬸締î§ 斜öŪö§﹘裔﹘î§⬸莸䠰⬸莸♄䡠�斜斜♌♄⊰蟠䠰 裔§×莸§ᘈ⬸㘬ĺ§㔤締ĺ§nĀĀĀÝö§
Ĵö Şö§﹘﹘ð裔 î§öŪö§蟠뀐î§♌���♄⬸뀐蟠삐§13î§ ĆnĨƧ×ĆĴĴĖÝö§
ĆĀö斜﹘⬸締§Űî§ö§Ť﹘裔﹘﹘§斜 î§斜蟠§㫴蟠뀐﹘§斜﹘㘬﹘î§� 䠰 斜締裔삐§38î§ĆnĴĴĴ§×nĀĆĆÝö§
ĆĆö斜ö§Ű蟠﹘î§ 斜ö斜ö䡠ö§斜 î§ 斜öö§蟠裔㘬締î§♌��� 斜⬸䠰斜 ♄⊰§30î§ĮĢĖ§×ĆĴĴĜÝö§
Ćnöö§斜﹘㘬蟠﹘î§ Şöö§莸⬸î§♌���斜⬸䠰斜♄⊰§25î§ĜĮĖ§ ×ĆĴĴĀÝö§
ĆĐöỜö§뀐§ ﹘§ § ﹘öî§�⊰⬸⊰裔䡠î§ĜĜ§ ×♌ŶŰ䡠§ ⊰ ⊰﹘§Ű裔ö§♌﹘⬸﹘î§ĆĴĴĴ§Ý§
ĆĖö㫴ö�ö§裔⬸î§♌���斜⬸䠰斜♄⊰§29î§ĢĖĢ§×ĆĴĴĖÝö§ ĆĜö䡠ö§斜 ⬸î§♄䡠�斜﹘♄⊰蟠⊰ ⬸⬸締♄ ﹘裔§
×⊰§﹘ĺ§ĆĴĮĮÝö§
ĆĢö䡠ö§﹘裔î§ö§䡠﹘蟠î§ö§斜 ﹘ö§斜﹘⬸î§斜ö§䡠⬸ ﹘締î§ Şö§斜⬸蟠 î§♌���﹘⬸⊰ ⬸§10î§ĖĀn§×nĀĆĆÝö§
ĆĨööö§⬸裔裔⬸î§ ö§斜蟠﹘î§♌���♄⊰蟠裔䠰♌§ 51î§ĆĐĀƧ ×nĀĀĖÝö§
ĆĮöŞö§﹘﹘ð裔 î§ öŪö§蟠뀐î§♌���﹘裔♄⬸뀐蟠삐 §13î§ĆnĨƧ×ĆĴĴĖÝö§
ĆĴöö§㫴﹘莸﹘蟠﹘î§ ö§斜﹘㘬﹘뀐⬸⬸î§ ö§Ť﹘﹘î§ ᘈö§�⊰ ﹘î§ ö§蟠﹘î§ ö§斜⬸î§♌����⊰§47î§ĮĜĢ§×nĀĀĀÝö§
nĀö ö§î§斜ö§䡠⬸ ﹘締î§斜ö§Ū裔⬸⬸﹘蟠î§ö§斜㘬⬸⊰㘬î§♌��� �⊰§51î§nĖĀ§×nĀĀĖÝö§
nĆö ö§㫴ö§斜﹘ 蟠ö§㫴ö§Ť裔莸﹘裔î§Ūö§㫴ö§♌⬸ ♌ ⬸뀐﹘⬸﹘
⊰⬸뀐蟠斜⊰⊰§7§⬸Ćî§ĜĖ§×nĀĀĖö§
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