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Mat. Res. vol.6 número1

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Figure 2. Top view scanning electron micrographs, in the same magnification, for the nucleation on Ti6Al4V substrate using (a) -50; (b) -150; (c) -250 V bias, respectively.
Figure 4. The Raman spectra of diamond coatings at different ap- ap-plied bias voltages: (a) –50; (b) –150; (c) –250 V.
Figure 6. Total residual stress as function of bias voltage.

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