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J. Braz. Chem. Soc. vol.17 número6

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Figure 2. Infrared spectra for films after annealing at 1200  o C for 2 h, (a) SiC/Si 3 N 4 /Si, (b) SiC/SiO 2 -Thermal/Si, (c) SiC/SiO x N y /Si, (d) SiC/SiO 2  -PECVD/Si and (e) SiC/Si.
Figure 4. Raman scattering spectra from films after thermal annealing at 1200  o C for 2 h, (a) SiC/Si 3 N 4 /Si, (b) SiC/SiO 2 -PECVD/Si, (c) SiC/SiO x N y / Si, (d) SiC/SiO 2 -Thermal/Si and (e) SiC/Si.

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