section 6 12 To ensure a high production yield, the prescaler has been designed to work at a frequency 40% higher than required at nommai
7.3. Crystal Oscillator 117
13.005 p 13.004-
13.003-
^
13.002-ë 13.001-
0>
3 CT
S? 13-
LL
12.999-
12.998-
12.997-
0.2 0.4 0.6 1.2
(a) Pierce oscillator.
13.0025p
13.002-
13.0015-
|
13.001 -ë 13.0005-
0>
3 CT
S. 13- LL
12.9995-
12.999-
12.9985-
0.2 0.4 0.6 1.6
(b) Colpittsoscillator.
Figure
7.16: Measured VCXO tuning range.118
Chapter
7.Design
of the Transmitter12 9995
X 5
> 1 2 999
o n
<D
^l
2 9985®
tt_p
1 2 998
12 9975
5 10
switch code
15
Figure
7.17: Measured oscillationfrequency of
theColpitts
oscillatorwith internal varactor at the various switchespositions.
0.1 0.2 0.3
time(ms)
Figure
7.18:Start-up
transientof
the Pierce oscillator.Voltage Vgr
is the measured detectorgate
voltage (Fig.
712).
Chapter 8
Characterization of the Transceiver
Most of the circuits discussed in the
previous
twochapters
have beencombined on a
single chip
to realizeacomplete
Bluetooth transceiver.The IC includes
LNA, image-reject mixer,
channelfilter,
IFlimiting amplifier, demodulator, VCO, prescaler,
poweramplifier,
and antennaswitch. The two
crystal
oscillators have beenintegrated
on a separate IC toenable characterization of the twopoint
modulator with various reference oscillators. Aphotomicrograph
of the transceiver is shown inFig.
8.1.8.1 The Receiver
The
unpackaged
transceiver test IC has beenglued
and bonded on aprinted
circuit board. The channel filter and the demodulator have been tuned with thehelp
ofan externalpotentiometer
in such a way as toprecisely
set the oscillationfrequency
of the filterauxiliary
VCOat its nominal oscillation
frequency
of 6.5 MHz. The common-modevoltage
of the filter has been set with thehelp
of theon-chip bandgap
reference.
Figure
8.2 shows|^n|
in receive(black line)
and transmit mode(gray line).
The minimum of the curve in receive mode is set, among119
120
Chapter
8. Characterization of the TransceiverFigure
8.1:Photomicrograph of
the transceiverother
things, by
thelength
ofa bond wire No attempt was made to optimize itslength,
but it should bepossible
to shift the minimum ofthe curve to the center of the band
by slightly
increasing thelength
of the bond wire The
peaks
appearing in transmit mode arebogus,
and are due to the fact that
during
measurement the transmitter wassending
asignal
The static demodulation characteristic of the receiver appears in
Fig
8 5 The curve is well centered at 2MHz,
provinggood
match¬ing between
demodulator,
channelfilter,
andauxiliary
65 MHz VCOThe
dynamic
demodulation characteristic has been tested witha sinu-soidally
modulatedcarrierwithafrequency
of 2 434GHz,
amodulationindex of 0
32,
and modulated at 50 kHz The spectrumof the receiver outputsignal
measured with an input power of -50 dBm is shown inFig
8 1 The 50 kHzsignal
and odd harmonics of thesignal
areclearly
visible The spectrum shown
corresponds
to the maximal SNR of the receiver,which,
as in every FM receiver, is limitedby
thephase
noiseof the local oscillator '
1The noisefloor peaking around 10 kHz is caused bytheparticular PLL loop
8.1. The Receiver 121
2
1
4
11,
6
'
"-%,
N.^w| x
y i
8
>u i
0
2
x%
i\ y/4 i»
6
8
1.8 2.2 2.4 2.6
Frequency (GHz)
Figure
8.2: MeasuredS\\
mRx(black line)
and Tx(gray line)
mode.1 12 14 16 18 2 22 24 26 2£
Frequency (MHz)
Figure
8.3: Receiver demodulation characteristic.122
Chapter
8. Characterization of the TransceiverRef -2 0 dBm
1RM*
CLRWR
*RBW 300 Hz 'VBW 100 Hz Att 10 dB SWT 34 s
-20
I
—40
—50
U,1 I
PP»
r70 K1
JnW',1'*>1 ill
K
l>^11 Hpj^ "Il tv„7
''»k.^
'^'Iv.
"l"j*
—ii
-12 3
Start 0 Hz Stop 1 MHz
Figure
8.4: Demodulated outputsignal.
Since no data sheer has been
implemented,
we estimate the sen¬sitivity
and the iIP3 of the receiverby adding
the noise and the in¬termodulation
products generated by
the variousblocks,
and obtainasensitivity
of -74.9 dBm andan iIP3 of -18.1 dBm(at
theinput
of thechip).
The
blocking
characteristic of the receiver has been testedby
not¬ing
at which power of theinterfering signal
/ the SNR of the wantedsignal
Sbegins
todegrade.
The measured values are summarized in Table 8.1. Thespecifications
aresatisfiedatall butonefrequency:
withan
interfering signal
2 MHz below the wantedsignal,
the SNR of the wantedsignal begins
todegrade
with ablocking signal
3 dB below thefilter usedto testthe receiver. The filter hasabandwidth of 10kHz, and thephase margin of theloop is55°.
8.2. The Transmitter 123
S
(dBm) Af (MHz) I/S (dB)
Note-60 + 1 8
-60 -1 11
-60 +2 31
-60 -2 27 LO
frequency
-67 +3 41
-67 -3 30 1 ch. above
image freq.
-67 +4 43
-67 -4 23
image freq.
-67 +5 46
-67 -5 40 1 ch. below
image freq.
-67 +6 48
-67 -6 50
Table 8.1: Measured
blocking
characteristic. Thesignal
powerS has been chosenaccording
to the test conditionsspecified by
the Bluetooth standard.value
specified by
the standard. Therefore thisfrequency
hastobecon¬sidered one of the five
spurious
responses(with
relaxedspecifications)
allowed
by
the standard.8.2 The Transmitter
The prototype ICs have been combined with a commercial PLL fre¬
quency
synthesizer (ADF4110)
andtwovariablegain amplifiers
toforma
complete two-point
modulator whose blockdiagram
isshown inFig.
8 1. In Section 32 3 we have seen that the transfer function ofa two-
point modulator,
intheory
and ifproperly calibrated,
isindependent
from the
loop
filter. Inspite
ofthis,
theloop
filter determines which part of thespectrumof themodulating signal
contributestothe mod¬ulation of the output
signal through
thelow-frequency path Ppf,
andwhich part contributes
through
thehigh-frequency path Prf-
An up¬per limit to the
loop
bandwidth of atwo-point
modulator is therefore constitutedby
the modulation bandwidth of its reference oscillator.Unfortunately,
as noted in Section 7 35,
the modulation bandwidth of124
Chapter
8. Characterization of the TransceiverOUT
Figure
8.5: Blockdiagram of
the two-point modulatorprototype.crystal
oscillators is ratherlimited,
and in theparticular
case consid¬ered here it is not
large enough
toguarantee therequired
lock time.One way to solve this
problem
isby changing
theloop
bandwidthof the
synthesizer during operation: during
the transition from onechannel to
another,
we set the bandwidth of theloop
wideenough
tosatisfy
the lock timespecification,
whileduring
modulationwe set theloop
bandwidth narrowenough
toensuregood
modulationproperties
with little distortion.Figure
8 6 shows the classic second order filterconfiguration
usedto
implement
a third orderPLL, together
with two second order fil¬ter
configurations
suitabletochange
the bandwidth of thesynthesizer during operation.
The transfer function ofconfiguration (a)
isVo Icp
1
sCxRx
A-1s(CoA-C\)
'
s^Sl_1?1+I (8.1)
From this
equation
it is apparent that the zero and thehighest pole
of the transfer function can be
simultaneously
shiftedby changing
thevalue of resistor
R\.
The value of the lattercanbechanged by using
twoparallel
connected resistors and one switch as shown inconfiguration
(b).
Since theposition
of the switch also defines theimpedance
level of8.2. The Transmitter 125
(a) (b) (c)
Figure
8.6: PLLloop filters.
the
filter,
thecharge
pump currentLcp
has to beadjusted according
to its
position.
Configuration (c)
shows afilter with thehelp
of which it ispossible
to shift
only
the zero of the transfer function. Its location ischanged by injecting
thecharge
pump current either in A orin B:Vq
=
_y sCifli
+1 (82)Icpa s(Co
+C7i) s_Co^_(jRo
+jRl)
+ 1 ^->Vo
=
I
sC1(R1
+Ro)
+ I . .Icpb s(C0
+C\)
'
s^-(Äo
+Ri)
+ l [ ' 'This canbe
implemented
withoutusing
anyswitchby integrating
twocharge
pumps. The ratio between the currentsof thetwocharge
pumpsIcpa/IcPb
is determinedby
the amountby
which the zero has to beshifted.
Shifting only
thezeroof the transfer function has theadvantage that, by doing
so, it ispossible
tosimultaneously change
the bandwidth and thephase margin
of theloop. Differently
from what issuggested by
the results ofa linear
analysis, practical experimentation
shows in fact that the modulation distortion ofatwo-point
modulator is a function of thephase margin:
a smallphase margin
causes alarge
distortion.Figure
8.7 shows thepeak-to-peak frequency
deviation normalized to320kHzas a function of modulationfrequency
measuredonthepro¬totype with the
Colpitts crystal oscillator,
for twofilterconfigurations:
126
Chapter
8. Characterization of the Transceiver2
1.5
1
_
°-5 m
a. 0
O
-1
-1.5
-2
102 103 104 105
Frequency(Hz)
Figure
8.7:Frequency
responseof
the two-point modulator.thegraycurvehas been measured witha
loop
bandwidth of 15 kHz anda
phase margin
of52°,
the blackcurve with aloop
bandwidth of 2 kHz andaphase margin
of 76°. The transfer function of thetwo-point
mod¬ulator could be made
perfectly
flatby replacing
thecrystal
oscillatorwith a
signal
generator(HP ESG-3000A), confirming
that thecrystal
oscillator is
effectively by
far the mostimportant
sourceof distortion.The distortion observedontheprototype
employing
the Pierce oscil¬lator is much
larger
than theoneobservedon theprototypeemploying
the
Colpitts
oscillator.The poweremitted
by
the transmitter is -0.5 dBm.Chapter 9
Conclusions
In this thesis we have
presented
thetop-down design
ofalow-power, highly integrated
transceiver for the Bluetoothshort-range
wirelesstechnology, developed
in a 0.18 fiia CMOStechnology.
Thedesign
has started with a careful
study
of thespecifications,
followedby
ananalysis
of various transceiverarchitectures,
and concluded with thedesign
andimplementation
ofappropriate
circuits.The
applications targeted by
theproject
are wrist-watches andsmart-cards,
which have verytight
powerconsumption requirements.
For this reason, power
consumption
wasgiven
ahigh priority through¬
out all of the
phases
of thedesign.
Inaddition,
in the attempt to go as closeaspossible
tothe ultimate powerconsumption (for
the chosentechnology),
it was decided at thebeginning
of theproject
tosatisfy
the
specifications imposed by
the standard withonly
a smallmargin.
A second very
important
constraint dictatedby
thetargeted appli¬
cations is the small space intowhich the whole systemhas to fit. The fulfillment of this constraint dictates the
implementation
of ahighly integrated
solution. Thedeveloped transceiver,
besidesmaking
useofa low-IF receiver architecture to allow
integration
of the channel fil¬ter, has a
single-ended
RF interface and includes anon-chip
antennaswitch, simplifying
its use andavoiding
the need for external baluns and switches.Although
the RFperformance required by
Bluetooth is not verydemanding
ifcompared
with othertechnologies,
theimplementation
127
128
Chapter
9. Conclusionsof a
highly integrated,
low power transceiver is quitechallenging
asshown
by
the power consumption ofmost commercialproducts
whichis around 40 mA at 3 V m receive
mode,
andslightly
lower in trans¬mit mode
Only recently
Texas Instruments Inc has made a step in direction lowpower,introducing
onthe marketa0 13 iim CMOS Blue¬tooth unit
(including
basebandprocessor')
with a power consumption of 37 mA at 2 V m receivemode,
and 25 mA in transmit mode Toour
knowledge,
up to now the Bluetooth transceiver with the lowest power consumptionpublished
in the open literature consumes 34 mA at 1 8Vm receivemode,
and 26mAintransmitmode[
I]
Ourdesign
requires 26mAat 1 8Vm receive
mode,
and 23mAintransmitmode, however,
with aslightly
inferiorperformance
The bottleneck of the
dynamic
range of the receiverpresented
inthis work is constituted
by
the active channel filterBy
improving itsdynamic
range, it ispossible
togreatly
ameliorate sensitivity inter¬modulation,
andblockmg performance
of the wholereceiver Unfortu¬nately,
an improvement of thedynamic
rangeofananalog
active filtergoes
along
with a substantial increase of the powerconsumption Oneapproach
which deserves consideration and which becomes more andmoreattractive asthe minimumfeaturesize of
technologies
isreduced,
is to
implement only
part of thefiltering
in theanalog domain,
andperform
the rest of the channel selection(and demodulation)
in thedigital
domainConcerning
power consumption, the blocks of the receiver consum¬ing mostof thepowerarethetwo
divide-by-two frequency
dividers used to generate thequadrature
LOsignals,
and todrive the powerampli¬
fier and the
prescaler
Due to thegood
measured image-rejection, we believe that there is some margin for power reduction The image- rejection is infact almostcompletely
setby
thepolyphase
filter usedto recombme the I andQ signal paths
Itisthereforeadvantageous
touseonly
one(slightly stronger) divider,
and balance the loads connected to its I andQ
output ports withdummy
structuresFurthermore,
itwould beinterestingtoinvestigatetheuse of ESCL
logic
withresonantloads
On the transmitter
side,
we haveadopted
an architecturerequiring verylittleextracircuitryoverwhatisneededtoimplement
thereceiver, 1ThelowestpowerBluetooth basebandprocessoronthe marketconsumes2mA at 1 8V129
and have found a way to solve the restrictions related to the limited modulation bandwidth of
crystal
oscillators Themampower consum¬ing block of the transmitter is thepower
amplifier
This ismamly
dueto the low
quality
factor of thespiral
inductor usedtoimplement
the outputmatching network,
and to the attenuation introducedby
theon-chip
antennaswitchWhereas the introduction of
deep
submicron CMOStechnologies
and thecontinuingtrend toward
always
smallerminimum feature sizescanbe claimedtohave
only
positiveeffectsondigital
systems, thesamecannotbe said for
analog
systems Thegeometryof thetransistors and the currentrequired
foranalog designs
is in fact dictated moreby
lin¬earity and noise requirements than
by technology dependent
factors 2In
addition,
the reducedsupply voltage
accompanying moderndeep
submicron CMOS
technologies
makes the fulfillment oflinearity
andcompression requirements an even more difficult task To
implement
a low power transceiver it is therefore not
enough
to use a technol¬ogy with fast transistors, but it is
indispensable
to have an intimateknowledge
of all of the requirements of thesystem tobeimplemented,
andto
optimally exploit
thestrengths
and the newpossibilities
offeredby modern, deeply
scaledtechnologies
This work shows that with acareful
top-down design procedure
itispossible
toimplement
ahighly integrated
transceiverin acosteffectivetechnology
with avery modest power consumption2Unlessworkingveryclosetothe maximumcutofffrequency fp of the technol¬
ogy
130
Chapter
9. ConclusionsAppendix A
Bluetooth Specifications Summary
Parameter Value Comment
Connection
Access TDMA
Duplex TDD
TDD guardtime 220 /us
Frequency
Band 2.40-2.4835 GHz
Channelspacing 1 MHz
Accuracy ± 75 kHz
400
Hz//iis
initialcenter frequency
max. driftrate
Hopping 1.6
kHops/s
Modulation
Type GFSK
(BT=0.5)
Freq. deviation ± 140-175 kHz mod. index0.28... 0.35 Burst bit rate 1
Mbit/s
Minimumfreq.
deviation
115 kHz
Accuracy ±20 ppm
(±10/lis)
<
1/8/KS
symbol timing
zerocrossing
131
132
Chapter
A. BluetoothSpecifications Summary
Parameter Value Comment
Receiver
Sensitivity -70dBm BER= 0.1 %
(71
pNrms on500)
Max. input level -20dBm
(23
mVrms on 500)
iIP3 -17dBm SNRdem=19
Noise figure 25 dB SNRdem=19
Blocking
(S=-67 dBm)
-27dBm
-10dBm
2.0-2.399 GHz 2.498-3.0 GHz 30-2000MHz 3.0-12.75 GHz
Image rejection 20dB in-band
Interference
C/I
11 dBOdB
-30dB
-40dB
co-channel; S=-60 dBm
1st adjacent channel;
S=-60 dBm
2nd adjacent channel;
S=-60 dBm
> 3rd adjacent channel;
S=-67 dBm Spuriousemission -57dBm
-47dBm
30-1000MHz
1-12.75 GHz
(out-of-band)
1st Local Oscillator
(Tx
andRx)
Phase noise -80
dBc/Hz
-101
dBc/Hz
-111
dBc/Hz
@ 550 kHz
@ 2 MHz
@ 3 MHz Transmitter
Oputputpower lmW class 2, 3
Spuriousemission In-band
Out-of-band
FCC Part 15.247c -20dBc
-20dBm -40dBm -36 dBm -30dBm -47dBm -47dBm
@ ± 550 kHz
|N-M|=2
N-M >3 30-1000MHz 1-12.75 GHz 1.8-1.9 GHz 5.15-5.3 GHz
Bibliography
[1]
A. Loke and F.Ali,
"Direct conversion radio fordigital
mo¬bile
phones—design issues,
status, andtrends,"
IEEE Trans. Mi¬crowave
Theory Tech.,
vol.50,
no.11,
pp.2422-2435,
Nov. 2002.[2]
J. C. Haartsen and S.Mattisson,
"Bluetooth—a newlow-power
radio interface
providing short-range connectivity,"
Proc.IEEE,
vol.
88,
no.10,
pp.1651-1661,
Oct. 2000.[3]
J. C.Haartsen,
"The Bluetooth radiosystem,"
IEEE Personal Commun.Mag.,
vol.7,
pp.28-36,
Feb. 2000.[4] Specification
of the Bluetooth system. The BluetoothSpecial
Interest
Group. [Online].
Available:http://www.bluetootli.coiu [5]
N.Cotanis,
"The radio receiversaga: An introductiontothe clas¬sic paper
by
Edwin H.Armstrong,"
Proc.IEEE,
vol.85,
no.4,
pp.681-684, Apr.
1997.[6]
W. G.Kasperkovitz,
"FM receivers formonoandstereoon asingle chip," Philips
TechnicalReview,
vol.41,
no.6,
pp.169-182,
1983.[7]
L. Der and B.Razavi,
"A 2-GHz CMOSimage-reject
receiverwith LMScalibration,"
IEEE J. Solid-StateCircuits,
vol.38,
no.2,
pp.167-175,
Feb. 2003.[8]
A. A.Abidi, "Low-power radio-frequency
ICs forportable
commu¬nications,"
Proc.IEEE,
vol.83,
no.4,
pp.544-569, Apr.
1995.[9]
, "Direct-conversion radio transceivers fordigital
communica¬tions,"
IEEE J. Solid-StateCircuits,
vol.30,
no.12,
pp.1399-1410,
Dec. 1995.133
134
Bibliography
[10]
P. R.Gray
and R. G.Meyer,
"Future directions in silicon ICs for RFpersonal communications,"
inDigest of
TechnicalPapers,
1995 Custom
Integrated
CircuitsConference. IEEE, May 1995,
pp. 83-90.
P. E. Allen and D. R.
Holdberg,
CMOSAnalog
CircuitDesign.
Oxford
University
PressInc.,
1987.I. A. W.
Vance, "Fully integrated
radiopaging receiver,"
IEEProc,
vol.129,
no.1,
pp.2-6,
Feb. 1982.J. F.
Wilson,
R.Youell,
G.Richards, Tony
H.Luff,
and R.Pilaski,
"A
single-chip
VHF and UHF receiver for radiopaging,"
IEEE J.Solid-State
Circuits,
vol.26,
no.12,
pp.1944-1950,
Dec. 1991."SA2400A data sheet:
Single chip
for 2.45 GHz ISMband," Philips
Semiconductors.
"RF109 data sheet: 2400 MHz
digital spread
spectrum trans¬ceiver,"
ConexantSystems
Inc.A.
Pärssinen,
J.Jussila,
J.Ryynänen,
L.Sumanen,
and K. A. I.Jalonon,
"A 2-GHz wide-band direct conversion receiver forWCDMA
applications,"
IEEE J. Solid-StateCircuits,
vol.34,
no.
12,
pp.1893-1903,
Dec. 1999.K.
Kurokawa, "Injection locking
of microwave solid-state oscilla¬tors,"
Proc.IEEE,
vol.61,
no.10,
pp.1386-1410,
Oct. 1973.B. Madsen and D. E.
Fague,
"Radios for the future:Designing
forDECT,"
RFDesign,
vol.16,
no.4,
pp.48-53, Apr.
1993.J. J.
Kucera, "Highly integrated
RFtransceivers,"
Ph.D. disser¬tation,
Swiss Federal Institute ofTechnology, Zürich, Switzerland,
1999.
"LMX3161 data sheet:
Single chip
radiotransceiver,"
NationalSemiconductor.
"AD6411 data sheet: DECT RF
transceiver," Analog
Devices.R. E.
Best,
Phase-lockedloops: design, simulation,
andapplica¬
tions, 3rd ed. New York: McGraw Hill, 1997.
Bibliography
135[23]
P. L.Field,
A. E.Jones,
and J. G.Gardiner, "Optimum loop
bandwidth of
phase-locked modulators,"
in IEEColloquium
onAdvanced Modulation and Channel
Coding Techniques for
Mobileand Personal Communications.
IEE,
Nov. 1992.[24]
M. H.Perrott,
T. L.Tweksbury III,
and C. G.Sodini,
"A 27-mW CMOS fractional-Nsynthesizer using digital compensation
for 2.5-Mb/s
GFSKmodulation,"
IEEE J. Solid-StateCircuits,
vol.32,
no.
12,
pp.2048-2060,
Dec. 1997.[25]
H.Darabi,
S.Khorram,
B.Ibrahim,
M.Rofougaran,
and A. Ro-fougaran,
"An IF FSK demodulator for Bluetooth in 0.35 iimCMOS,"
inProceedings of
Custom ICConference
2001.IEEE, 2001,
pp. 523-526.[26]
"SAFU110.0MSA45T-TC02 data sheet:Specification
for SAW fil¬ter,"
MurataManufacturing Co.,
Ltd.[27]
"DCF22R44P084LHA data sheet: Ceramic microwavefilters,"
Murata
Manufacturing Co.,
Ltd.[28]
D. K.Su,
M. J.Loinaz,
S.Masui,
and B. A.Wooley "Experimental
results and
modeling techniques
for substrate noise inmixed-signal integrated circuits,"
IEEE J. Solid-StateCircuits,
vol.28,
no.4,
pp.
420-430, Apr.
1993.[29]
H.-M.Hsu,
J.-Y.Chang,
J.-G.Su,
C.-C.Tsai,
S.-C.Wong,
C.
Chen,
K.Peng,
S.Ma,
C.Chen,
T.Yeh,
C.Lin,
Y.Sun,
andC.
Chang,
"A 0.18 /xmfoundry
RF CMOStechnology
with 70 GHzft
forsingle chip
systemsolutions,"
in 2001 IEEE MTT-S Inter¬national Microwave
Symposium Digest,
vol. 3.Phoenix,
Arizona:IEEE, May 2001,
pp. 1869-1872.[30]
Y. P.Tsividis, Operation
andModeling of
the MOS Transistor.New York:
McGraw-Hill,
1987.[31]
E. Vittoz and J.Fellrath,
"CMOSanalog integrated
circuitsbasedonweak inversion
operation,"
IEEE J. Solid-StateCircuits,
vol.12,
no.
3,
pp.224-231,
June 1977.136
Bibliography
[32]
P.Orsatti,
"A lowpowerCMOS GSM transceiver for small mobilestations,"
Ph.D.dissertation,
Swiss Federal Institute of Technol¬ogy,
Zürich, Switzerland,
2000.[33]
F.Beffa,
R.Vogt,
W.Bächtold,
E.Zellweger,
and U.Lott,
"A6.5-mW receiver front-end for Bluetooth in
0.18-/tin CMOS,"
in2002 IEEE Radio
Frequency Integrated
Circuits(RFIC) Sympo¬
sium, June
2002,
pp. 391-394.[34]
A.Rofougaran,
J.Rael,
M.Rofougaran,
andA.Abidi,
"A 900 MHz CMOS LC-oscillator withquadrature outputs,"
inProc. IEEE Int.Solid-State Circuits
Conf. IEEE, 1996,
pp. 392-393.[35]
T.-P.Liu,
"A 6.5 GHz monolithic CMOSvoltage
controlled oscil¬lator,"
inProc. IEEE Int. Solid-State CircuitsConf IEEE, 1999,
pp. 404-405.
[36]
M. J.Gingell, "Single
sideband modulationusing
sequence asym¬metric
polyphase networks,"
ElectronicCommunications,
vol.48,
no. 1 and
2,
pp.21-25,
1973.[37]
A.Hajimiri
and T. H.Lee, "Design
issues in CMOS differential LCoscillators,"
IEEE J. Solid-StateCircuits,
vol.34,
no.5,
pp.717-724, May
1999.[38]
D. B.Leeson,
"Asimple
model of feedback oscillator noise spec¬trum,"
Proc.IEEE,
vol.54,
pp.329-330,
Feb. 1966.[39]
T. H. Lee and A.Hajimiri,
"Oscillatorphase
noise: Atutorial,"
IEEE J. Solid-State
Circuits,
vol.35,
no.3,
pp.326-336,
Mar.2000.
[40]
A.-S.Porret,
T.Melly,
C. C.Enz,
and E. A.Vittoz, "Design
ofhigh-Q
varactors forlow-power
wirelessapplications using
a stan¬dard CMOS
process,"
IEEE J. Solid-StateCircuits,
vol.35,
no.3,
pp.