AppliedSurfaceSciencexxx (2011) xxx–xxx
ContentslistsavailableatScienceDirect
Applied
Surface
Science
jo u rn a l h om epa g e :w w w . e l s e v i e r . c o m / l o ca t e / a p s u s c
Optical
properties
of
LFZ
grown
-Ga
2
O
3
:Eu
3+
fibres
N.F.
Santos
a,
J.
Rodrigues
a,
A.J.S.
Fernandes
a,
L.C.
Alves
b,
E.
Alves
b,
F.M.
Costa
a,
T.
Monteiro
a,∗aDepartamentodeFísica,I3N,UniversidadedeAveiro,CampusUniversitáriodeSantiago,3810-193Aveiro,Portugal bInstitutoTecnológicoeNuclear,2686-953Sacavém,Portugal
a
r
t
i
c
l
e
i
n
f
o
Articlehistory: Received29April2011
Receivedinrevisedform1July2011 Accepted14July2011 Available online xxx Keywords: LFZ Ga2O3 Eu PL PLE
a
b
s
t
r
a
c
t
Duetotheirrelevanceforelectronicandoptoelectronicapplications,transparentconductiveoxides(TCO)
havebeenextensivelystudiedinthelastdecades.Amongthem,monoclinic-Ga2O3iswellknownbyits
largedirectbandgapof∼4.9eVbeingconsideredadeepUVTCOsuitableforoperationinshortwavelength
optoelectronicdevices.Thewidebandgapof-Ga2O3isalsoappropriatefortheincorporationofseveral
electronicenergylevelssuchasthoseassociatedwiththeintra-4fnconfigurationofrareearthions.Among
these,Eu3+ions(4f6)arewidelyusedasaredemittingprobesbothinorganicandinorganiccompounds.In
thiswork,undopedandEu2O3doped(0.1and3.0mol%)Ga2O3crystallinefibresweregrownbythelaser
floatingzoneapproach.Allfibreswerefoundtostabilizeinthemonoclinic-Ga2O3structurewhilefor
theheavilydopedfibrestheX-raydiffractionpatternsshow,inadditionacubiceuropiumgalliumgarnet
phase,Eu3Ga5O12.ThespectroscopicpropertiesoftheundopedandEudopedfibreswereanalysedby
Ramanspectroscopy,lowtemperaturephotoluminescence(PL)andphotoluminescenceexcitation(PLE).
TheEu3+luminescenceismainlyoriginatedinthegarnet,fromwheredifferenteuropiumsitelocations
canbeinferred.ThespectralanalysisindicatesthatatleastoneofthecentrescorrespondstoEu3+ions
indodecahedralsitesymmetry.Forthelightlydopedsamples,thespectralshapeandintensityratioof
the5D
0→7FJtransitionsistotallydifferentfromthoseonEu3Ga5O12,suggestingthattheemittingions
areplacedinlowsymmetrysitesinthe-Ga2O3host.
© 2011 Elsevier B.V. All rights reserved.
1. Introduction
-Ga2O3isawellknownwidebandgapsemiconductorwith
reportedbandgapenergyatroomtemperature(RT)near4.9eV [1–4].TheRTthermodynamicallystablemonocliniccrystalhascell dimensionsa=1.223nm,b=0.304nm,c=0.580nmandˇ=103.7◦ [3,4].The materialbelongs toa C2/m space groupand theGa3+
ionsmayoccupytetrahedraloroctahedralcrystallographicsites [4,5].Thematerialexhibitsisolatorbehaviourorn-type conductiv-itygenerallyattributedtoanionoxygenvacancies,theresistivity beingstronglydependentontheatmospheregrowthconditions [6].However,thisbecame controversialsincerecently theoreti-cal studies[7] pointed that oxygenvacanciesgiverise todeep donors,withactivationenergiesaround1.0eV,andsocannotbe responsiblefortheunintentionaln-typeconductivityobservedin thisoxide.Duetotheabove-mentionedelectricalconductivityand hightransparency,-Ga2O3hasbeenfrequentlyexploitedfor
sev-eralelectronicandoptoelectronicapplicationsincludingelectrodes asatransparentconductiveoxide(TCO)[3,4].Forsuchpurposes, information aboutthe opticallyactivedefects and theirenergy
∗ Correspondingauthor.Tel.:+351234370824;fax:+351234378197. E-mailaddress:tita@ua.pt(T.Monteiro).
distributioninsidethewidebandgaphostconstitutesone impor-tantissue.Underabovebandgapexcitation,ultraviolet,blueand greenbroadluminescencebandspeakednear3.4,2.95and2.48eV havebeenreportedinundopedanddoped-Ga2O3 single
crys-tals[8–10].Theultravioletemissionhasbeenfoundtobesample independent,whiledeeplevelrecombinationhasbeenfoundto bedependentonthechemicalnatureoftheimpuritiesandtheir content[10].Particularly,theultravioletrecombinationhasbeen attributedtointrinsicluminescenceandthebluebandhasbeen assignedtoadonor–acceptorgallium–oxygenvacancypair recom-bination[9,10].
Furthermore,thewidebandgapof-Ga2O3makesthisTCOa
suitablehostforphosphorapplications[11–22].Asanexample, highluminancewasobtainedinthin-filmelectroluminescent dis-playswhengallium oxideis activatedwitheuropiumions[12]. However,due topoorcrystallization ofthegallium oxidefilms [13–15],therareearthionemissionlinesareverybroadand lit-tle isknown aboutthemechanisms behindthe intraionic Eu3+
luminescenceinthecrystallineGa2O3environment.Morerecently,
nanostructured-Ga2O3hasbeensynthesizedbydifferentroutes
andintentionallyactivatedwithrareearthionsfornanophosphor applications[17–22].Asforthethinfilms[13–15],largefullwidth athalfmaximumofthemain5D
0,1→7FJtransitionsoftheEu3+ions
inthenanopowders[18,20]contrastwiththeexpectedsharplines
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Fig.1.Typicalvisualappearanceofthe(a)(top)undopedand(bottom)0.1mol%europiumdopedfibresgrownat30mmh−1.SEMmicrographsofthe(b)undopedfibreand europiumdopedfibreswith(c)0.1mol%and(d)3mol%grownat30mmh−1.
fortheemittingionsincrystallineenvironments,fromwherethe identificationofthenumberofemittingEucentresandsite symme-trycouldbeexploredviatheStarklevelsplittingduetothecrystal fieldeffect.AlthoughtheEu3+emissionhasbeenreportedforthin
filmsandnanopowders[11–22],informationontherareearthion spectroscopicpropertiesinbulk-Ga2O3remainsscarceand
con-stitutesanimportantissuetoclarifytheionpropertiesinsidethis TCOmaterial.
Inthepresentwork,undopedandEudoped-Ga2O3fibreswere
grownbylaserfloatingzone(LFZ).Thesampleswerecharacterized inwhatconcernstheirmorphologyandstructure(SEM/EDS,PIXE, XRD,Ramanspectroscopy),andtheirresultinglowtemperature optical properties (photoluminescence and photoluminescence excitation).Theobservedopticalcentresarediscussedwithrespect totheirpossiblephaseoriginandsitesymmetry.
2. Experimentaldetails
The-Ga2O3crystallinefibresweregrownbytheLFZtechnique,
usingrodprecursorsfor bothfeedandseedmaterialsprepared bycoldextrusion.Theserodswereobtainedbyusinggallium(III) oxide(AlfaAesar)powdersfortheundopedsamplesandadding 0.1%and3.0mol%Eu2O3(Aldrich)forthedopedones.The
pow-dersweremixedwithpolyvinylalcohol(PVA0.1g/ml,Merck)in ordertoobtainaslurrythatwasfurtherextrudedintocylindrical rodswithdiametersof1.75mm.
TheLFZequipment comprises a 200W CO2 laser (Spectron)
coupledtoareflectiveopticalset-upproducingacircular crown-shapedlaserbeaminordertoobtainafloatingzoneconfiguration witha uniformradialheating.Crystallinefibres withdiameters of 1–2mm were grown at 10 and 30mmh−1 in air at atmo-spheric pressure. Fibre microstructure and phase development werecharacterizedbySEM(HitachiS4100)withenergy disper-sivespectroscopy(SEM/EDS)onpolishedsurfacesoflongitudinal fibresections.Additionally,inordertoobtaininformationonthe europiumdistributioninthefibres,particle-inducedX-ray
emis-sion(PIXE)wasperformedusinga2.0MeV1Hmicrobeamanda
10-mm2 Si(Li)detectorwitharesolutionof145eVanda5-mm
Bewindow. Thestructuralcharacterization wasmadebyX-ray diffraction(XRD)experiments(PANalyticalX’PertPRO)andRaman spectroscopy.Thelatterwereperformedatroomtemperature(RT) inbackscatteringconfigurationwithultravioletexcitationbyusing the325nmlineofacwHe–Cdlaser(KimmonIKSeries)inaHoriba Jobin Yvon HR800systemand the532nmline froma Ventus-LP-50085(MaterialLaserQuantum)laserinaJobinYvonT64000 instrument.
SteadystatePLmeasurementswerecarriedoutat14Kusing a1000WXearclampcoupledtoamonochromatorasexcitation source.TheluminescencewasdispersedbyaSpex1704 monochro-mator(1m, 1200mm−1)and detectedby a cooledHamamatsu R928photomultiplier.For thePLexcitation(PLE)measurements theemissionmonochromatorwassetattheEu3+emissionlines,
theexcitationwavelengthhavingbeenscannedupto240nm.The spectrawerecorrectedtothelampandoptics.
3. Resultsanddiscussion
The visual appearance of the undoped and Eu doped gal-lium oxidefibres are shown in Fig.1a. The undopedfibre was foundtobe transparentwhile the Eu dopedsamples exhibit a grey colour.The morphologicalanalysis ofthefibres longitudi-nalsections(Fig.1b–d)reveals,fortheundopedfibre,anuniform surfacewithoutgrainboundariesorsecondphases(Fig.1b) regard-less thepulling rate(10and 30mmh−1).In opposition,doping inducespolycrystallinenatureinbothlightly(0.1mol%)and heav-ily(3.0mol%)dopedsamples.However,theheavilydopedfibres showevidenceofasecondphaseplacedatthegrainboundaries (lightgreycontrast),whilethelightlydopedfibrespresent poly-crystallinemorphologywithgooduniformityevidencinghowever dispersedprecipitates.TheSEMimagesofdopedfibres(Fig.1d) showevidentgrainboundaryfeaturesalignedwiththefibreaxis asaresultofdirectionalsolidificationcharacteristicofthelaser
N.F.Santosetal./AppliedSurfaceSciencexxx (2011) xxx–xxx 3
Fig.2.SEMmicrographs(a,c)andEDSmaps(b,d)ofthefibresgrownat30mmh−1lightlydoped(a,b)andheavilydoped(c,d).
floatingzonegrowthtechnique.Theadditionalcontrastedregions inheavilydopedfibresareduetolocalEurichercrystallinephases ascorroboratedbyPIXE(notshown),EDS(Fig.2),XRD(Fig.3)and Raman(Fig.4)analysis.ThepeakpositionsoftheXRDpatternsof undopedandlightlydopedfibresaftermilledintopowdersarein goodagreementwiththeexpectedreflectionsfromthemonoclinic -Ga2O3crystallinestructure.Fortheheavilydopedfibres,besides
the-Ga2O3crystallinestructure,anadditionalcrystallinephase
wasdetectedcorrespondingtothepresenceofeuropiumgallium garnet,Eu3Ga5O12.Thisadditionalcrystallinephasecorresponds
totheclearregionsinSEMwithhighereuropiumcontent.Since thisphasecouldnotbedetectedinthelightlydopedsamples,one caninferthattheamountofEuinthesefibresisstillscarceto pro-motethedevelopmentofthegarnetphase.Althougheuropiumrich precipitateswereobservedbySEM/EDS(Fig.2aandb)mostofthe europiumionsremaindispersedinthegalliumoxidematrix.
The Raman active modes were observed for the LFZ fibres, eitherwithvisible(Fig.4a andb)and ultraviolet(Fig.4c) exci-tation.ThemeasuredvibrationalfrequenciesindicatedinTable1
Fig.3.XRDpatternsfortheundopedanddoped(0.1and3mol%Eu2O3)fibres grownat30mmh−1.
forboththeundopedandlightlydopedfibres,correspondwellto theonesof the-Ga2O3 host[23,24].TheobservedRaman
fre-quenciesareclassifiedinthreegroupsofvibrationsrelatedwith librationsandtranslations(lowfrequencymodesupto∼200cm−1) of tetrahedra–octahedra chains, vibrations of deformed Ga2O6
octahedra (mid frequency modes within 310–480cm−1) and stretching/bendingoftheGa2O4tethaedra(highfrequencymodes:
550–770cm−1)[23,24]. TheRamanspectraoftheundopedand lightlydoped fibresare comparable as shownin spectra1 and 2, respectively (Fig.4a).For theheavily dopedfibre (spectrum 3),additionalmodesat 261cm−1 and 279cm−1 wereidentified correspondingtotheeuropiumgalliumgarnetphaseEu3Ga5O12,
depictedintheexpandedregionobtainedwithvisibleexcitation (Fig.4b)[25].TheaboveinformationissummarizedinTable1.The visibleRamanspectrawereacquiredwiththesamplesoriented bothparallelyandnormallytothepolarizationplaneofthelaser
100 200 300 400 3) 2) 1) 346 320 199 168 144 111; 114 a) Raman shift (cm-1) λ = 532 nm; RT 400 600 800 3) 1) Intensity (arb. units) c) λ = 325 nm; RT 764 658 629 475 416 346 320 260 280 300 3) 2) 1) b) 279 261
Fig.4.(a)Ramanspectraobtainedwithvisibleexcitation(532nm)fortheundoped, lightlydopedandheavilydopedfibres,spectrum1,2and3,respectively.Thedashed lineinspectrum3correspondstodifferentsampleorientation(parallelandnormal totheplaneofpolarization).(b)ExpandedregionoftheRamanspectraobtained withvisibleexcitation.(c)UV(325nm)Ramanspectraforthesamesetofsamples.
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Table1
RamanfrequenciesofundopedandEu-doped-Ga2O3fibres.TheadditionalmodesdetectedfortheEu-dopedfibresareidentifiedbyanasterisk(*).
Presentwork(cm−1) Ga2O3 Eu3Ga5O12
Dohyetal.[23](cm−1) Raoetal.[24](cm−1) Modeassignments[23] Middletonetal.[25](cm−1) Modeassignments[25]
111 111 Ag 114(*) 114 Bg 113 Eg 144 147 144 Bg 144 Eg 159 T2g 168 169 169 Ag 170 T2g 180 T2g 199 199 200 Ag 233 T2g 239 T2g 261(*) 262 Eg 279(*) 273 T2g 291 Eg 309 T2g 320 318 317 Ag 346 346 344 Ag 346 A1g 353 Bg 367 T2g 407 T2g 416 415 416 Ag 415 Eg 475 475 472 Ag,Bg 507 T2g 523 A1g 580 T2g 595 T2g 629 628 629 Ag 651 Bg 658 657 654 Ag 674 Eg 736 A1g 764 763 767 Ag
incidence.Thechangesintheintensityratiosofthevibrational fre-quenciesduetolocalpolarizationeffects(dashedlinedspectra3) indicateastronganisotropy,confirmingthetexturednatureofthe fibres[23].
Fig.5showsthelowtemperatureluminescencespectraofthe undopedandEudopedfibrestakenat14K.Excitingtheundoped samplewithphotonsof260nm(4.77eV),theemissionis domi-natedbyabroadultravioletbandpeakedat377nmoverlapped byminorluminescencebandsnear438nmand526nm(Fig.5a). This luminescence spectrum is very similar to that previously reportedbyZhangetal.[26]in-Ga2O3singlecrystalsgrownby
thesameLFZtechnique.ForEudopedfibres(Fig.5b)the character-isticorange/redluminescenceduetothetransitionsbetweenthe
5D
0and 7FJmultipletswasdetected.For heavilydopedsamples
grownat10mmh−1 (spectrum1)containingthetwocrystalline phases(-Ga2O3andEu3Ga5O12),welldefinedsharplines(∼1nm
offullwidthathalfmaximum)aredetectedat591nm,592nm and595nm(spectrum1)originatedfromthelevelofthe5D
0state
andterminatingonthecrystalfieldsplitstatesofthe7F
1manifold.
Thismagneticdipoleemissionisthemostintenseoneandforthe hypersensitive5D
0→7F2transitiononlyonelinewasfoundpeaked
at∼610nm.Theheavilydopedfibresgrownatafasterpullingrate (30mmh−1)exhibitadistinctbehaviouroftheEu3+luminescence
(spectrum2).Here,thesamelinespreviouslydetectedare over-lappedwiththeinhomogeneousbroaden5D
0→7F1,2transitions
likelyduetoEu3+ionsindifferentenvironments.Additionally,the
integratedintensityratiobetweenthe5D
0→7F2 and 5D0→7F1
transitionsincreases,suggestingthattheeuropiumionsareplaced inlowersymmetrysitesasalsoindicatedbythepresenceofthe
5D
0→7F0line.Theformerspectrumwellmatchestheoneobserved
fortheionsinsidethecubicEu3Ga5O12asreportedbyVanderZiel
andVanUitert[27].Inthiscase,thesplittingoftheJ=1stateinthree componentsandtheabsenceofforbidden5D
0→7F0transitionis
inlinewiththeexpectedresultsfortheionsindodecahedralsites withD2localsymmetry[28,29].Moreover,rareearth(RE)ionsin
RE3Ga5O12hostsareknowntooccupymulti-siteswiththeREions
innon-regularsitesduetodistortionsoflocalsymmetry[27–30]. ThesimilarityoftheobtainedspectrafortheheavilydopedLFZ grownsampleseitherat10mmh−1 or30mmh−1(spectra1and 2)withthoseobtainedbyDaldossoetal.[29]fornanocrystalline Gd3Ga5O12alsodopedwitheuropiumions,suggestthatthemain
emittingeuropiumionsarelocatedintheeuropiumgalliumgarnet crystallinephase.Ontheotherhand,forthelightlydopedfibres,for whichnoEu3Ga5O12crystallinephasewasdetectedeitherbyXRD
andRamanspectroscopy,noticedspectralchangesoftheintraionic luminescence(spectrum3)were identified,suggesting thatthe mainemissionisoriginatedfromEu3+ionsin-Ga
2O3host.The
presenceofthe5D
0→7F0,1,2transitionsandtheirintensityratios
indicatethat the europium ionsare placed in lower symmetry sites.Theinhomogeneousbroadeningofthelinesobservedforthis lightlydopedfibre,isconsistentwiththepresenceoftheEu3+ions
inlowsymmetrysiteswithaninhomogeneousenvironment, prob-ablyduetothefibrepolycrystallinestructure.
The identification of the different Eu3+ centres was further
assessedbylowtemperaturePLEandwavelengthdependentPL measurements.PLEallows identifyingtheexcitation population mechanismswhichgiverisetoeuropiumluminescenceindoped fibres.ThenormalizedPLEspectramonitoredatthe5D
0→7F2
tran-sitionareshownin Fig.5c.Thespectrawerenormalizedtothe broadultravioletexcitationband,fromwherealltheEu-centres arepreferentiallypopulated.Additionally,allthecentrescouldbe excitedviatheupperenergeticlevelsoftheEu3+ionswhichexhibit
slightwavelengthdeviationsasexpectedfordifferenteuropium environments.Spectra2inFig.5ballowtotheidentificationthat distinctEucentrescouldbepreferentiallyexcitedwithphotons withdifferentwavelengths.
N.F.Santosetal./AppliedSurfaceSciencexxx (2011) xxx–xxx 5
700 650 600 550 500 450 400 350 300
Intensity (arb. units)
Wavelength (nm) a) 630 620 610 600 590 580 14K, PLE 3) c) b) 3) 2) 5 D2 7 F0
→
7 F2 7 F0 7 F1 5 D0→
Normal iz e d intensi ty 14K, PL 450 400 350 300 250 2) 1) 5 H3 5 D4 5 GJ 5 L6 5 D 3 (x10) Wavelength (nm) 1)Fig.5. 14KPLspectraexcitedwith260nmphotonsofthe(a)undopedfibregrownat 30mmh−1,(b)heavilydopedfibregrownat10mmh−1(spectrum1)and30mmh−1 (spectrum2,redline).Thebluelineinspectrum2wasobtainedunderresonant excitationat390nm,correspondingtoaPLEmaximumassignedtothe7F
0→5L6 transition.Spectrum3correspondstothelightlydopedfibregrownat30mmh−1. (c)14KPLEspectraofthesamefibresmonitoredonthe5D
0→7F2transition.
4. Conclusions
Undoped-Ga2O3 LFZgrownfibres andintentionallydoped
with 0.1 and 3mol% of europium were produced at two dif-ferent pullingrates(10 and30mmh−1).Thestructuralanalysis using XRD and Raman measurements indicate that, regardless thepullingrate,onlythe-Ga2O3crystallinephaseispresentin
theundopedandlightlydopedsamples.Forheavilydoped sam-ples, an additional Eu3Ga5O12 crystalline phase was identified.
SEM/EDSandPIXEanalysisshowthateuropiumrichregionsare presentinthelatterfibres,correspondingtotheeuropiumgallium garnetphase. LowtemperaturePL measurementsfor the heav-ilydopedsamplesevidencethatmostoftheemittingeuropium ions are in the garnet structure in different local site symme-tries and/or environments. Sharp Eu3+ lines were assigned to
europium ions in dodecahedral symmetry and other two cen-treswere visualizedwith theions in lowersite symmetry. On the other hand, for lightly doped samples,the intraionic lines areinhomogeneouslybroaderwithaspectralshapeofthe emit-tingionsdifferentthanthoseobservedfortheeuropiumgallium garnetphase. TheEu3+ luminescencefromtheionsin -Ga
2O3
hostis characterizedby the presenceof the 5D
0→7F0,1,2
tran-sitions,suggesting that theions are placed in lower symmetry sites.
Acknowledgement
The authors acknowledge FCT for the financial funding fromPTDC/CTM/66195/2006projectandPTDC/CTM/100756/2008 projects.
References
[1] H.H.Tippins,Opticalabsorptionandphotoconductivityinthebandedgeof -Ga2O3,Phys.Rev.A140(1965)316–319.
[2] M.Passlack,E.F.Schubert,W.S.Hobson,M.Hong,N.Moriya,S.N.G.Chu,K. Kon-stadinidis,J.P.Mannaerts,M.L.Schnoes,G.J.Zydzik,Ga2O3filmsforelectronic andoptoelectronicapplications,J.Appl.Phys.77(1995)686–693.
[3]N.Ueda,H.Hosono,R.Waseda,H.Kawazoe,Anisotropyofelectricalandoptical propertiesin-Ga2O3singlecrystals,Appl.Phys.Lett.71(1997)933–935. [4]M.Mohamed,C.Janowitz,I.Unger,R.Manzke,Z.Galazka,R.Uecker,R.Fornari,
J.R.Weber,J.B.Varley,C.G.VandeWalle,Theelectronicstructureof-Ga2O3, Appl.Phys.Lett.97(2010)211903(1)–211903(3).
[5] S.Geller,Crystalstructureof-Ga2O3,J.Chem.Phys.33(1960)676–684. [6] M.R.Lorenz,J.F.Woods,R.J.Gambino,Someelectricalpropertiesofthe
semi-conductor-Ga2O3,J.Phys.Chem.Sol.28(1967)403–404.
[7]J.B.Varley,J.R.Weber,A.Janotti,C.G.VandeWalle,Oxygenvacanciesanddonor impuritiesin-Ga2O3,Appl.Phys.Lett.97(2010)142106(1)–142106(3). [8]G.Blasse,A.Bril,Someobservationsontheluminescenceof-Ga2O3,J.Phys.
Chem.Sol.31(1970)707–711.
[9]T.Harwig,F.Kellendonk,S.Slappendel,Theultravioletluminescenceof -galliumsesquioxide,J.Phys.Chem.Sol.39(1978)675–680.
[10]L.Binet,D.Gourier,Originoftheblueluminescenceof-Ga2O3,J.Phys.Chem. Sol.59(1998)1241–1249.
[11]T.Xiao,A.H.Kitai,G.Liu,A.Nakua,J.Barbier,Thinfilmelectroluminescencein highlyanisotropicoxidematerials,Appl.Phys.Lett.72(1998)3356–3358. [12]T.Miyata,T.Nakatani,T.Minami,Galliumoxideashostmaterialformulticolor
emittingphosphors,J.Lumin.87–89(2000)1183–1185.
[13]J.Hao,M.Cocivera,Opticalandluminescentpropertiesofundopedand rare-earth-dopedGa2O3thinfilmsdepositedbyspraypyrolysis,J.Phys.D:Appl. Phys.35(2002)433–438.
[14] P.Wellenius,E.R.Smith,S.M.LeBoeuf,H.O.Everitt,J.F.Muth,Optimal composi-tionofeuropiumgalliumoxidethinfilmsfordeviceapplications,J.Appl.Phys. 107(2010)103111(1)–103111(5).
[15]J.Hao,Z.Lou,I.Renaud,M.Cocivera,Electroluminescenceofeuropium-doped galliumoxidethinfilms,ThinSolidFilm467(2004)182–185.
[16] P.Gollakota,A.Dhawan,P.Wellenius,L.M.Lunardi,J.F.Mutha,Y.N.Saripalli, H.Y.Peng,H.O.Everitt,OpticalcharacterizationofEu-doped-Ga2O3thinfilms, Appl.Phys.Lett.88(2006)221906(1)–221906(3).
[17] P.Wellenius,A.Suresh,J.V.Foreman,H.O.Everitt,J.F.Muth,Avisible transpar-entelectroluminescenteuropiumdopedgalliumoxidedevice,Mater.Sci.Eng. B146(2008)252–255.
[18]J.S.Kim,H.E.Kim,H.L.Park,G.C.Kim,Luminescenceintensityandcolorpurity enhancementinnanostructured-Ga2O3:Eu3+phosphors,Sol.St.Commun. 132(2004)459–463.
[19]E.Nogales,J.Á.García,B.Méndez,J.Piqueras,Dopedgalliumoxidenanowires withwaveguidingbehavior,Appl.Phys.Lett.91(2007)133108(1)–133108(3). [20] H.Xie,L.Chen,Y.Liu,K.Huang,Preparationandphotoluminescenceproperties ofEu-doped␣-and-Ga2O3phosphors,Sol.St.Commun.141(2007)12–16. [21]E.Nogales,B.Méndez,J.Piqueras,J.A.Garcia,Europiumdopedgalliumoxide
nanostructuresforroomtemperatureluminescentphotonicdevices, Nano-technology20(2009)115201(1)–115201(5).
[22]H.Zhu,R.Li,W.Luoab,X.Chen,Eu3+-doped-Ga
2O3nanophosphors:annealing effect,electronicstructureandopticalspectroscopy,Phys,Chem.Chem.Phys. 13(2011)4411–4419.
[23] D.Dohy,G.Lucazeau,Ramanspectraandvalenceforcefieldofsingle-crystalline Ga2O3,J.Sol.St.Chem.45(1982)180–192.
[24]R.Rao,A.M.Rao,B.Xu,J.Dong,S.Sharma,M.K.Sunkara,BlueshiftedRaman scatteringanditscorrelationwiththe[110]growthdirectioningalliumoxide nanowires,J.Appl.Phys.98(2005)094312(1)–094312(5).
[25]R.C.Middleton,D.V.S.Muthu,M.B.Kruger,High-pressurespectroscopicstudies ofeuropiumgalliumandgadoliniumaluminumgarnets,Sol.St.Commun.148 (2008)310–313.
[26]J.Zhang,B.Li,C.Xia,G.Pei,Q.Deng,Z.Yang,W.Xu,H.Shi,F.Wu,Y.Wu,J.Xu, Growthandspectralcharacterizationof-Ga2O3singlecrystals,J.Phys.Chem. Sol.67(2006)2448–2451.
[27]J.P.VanderZiel,L.G.VanUitert,OpticalemissionspectrumofCr3+-Eu3+pairs ineuropiumgalliumgarnet,Phys.Rev.186(1969)332–339.
[28]L.C.Courrol,L.Gomes,A.Brenier,C.Pédrini,C.Madej,G.Boulon,Optical detec-tionofEu3sitesinGd
3Ga5O12:Eu3,Rad.Eff.Def.Sol.:Inc.Plas.Sci.Plas.Tech. 135(1995)81–84.
[29]M.Daldosso,D.Falcomer,A.Speghini,P.Ghigna,M.Bettinelli,Synthesis,EXAFS investigationandopticalspectroscopyofnanocrystallineGd3Ga5O12doped withLn3+ions(Ln=Eu,Pr),Opt.Mater.30(2008)1162–1167.
[30]V.Lupei,RE3+emissioningarnets:multisites,energytransferandquantum efficiency,Opt.Mater.19(2002)95–107.