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Interband Magneto-Absorption in Narrow-Gap

Semiconductor Quantum Wells

V. Lop ez-Richard (a)

, G.E. Marques (a)

, and C.Trallero-Giner (b)

a

Departamento de Fisica, Universidade Federal de S~ao Carlos, 13565-905 S~ao Carlos S.P., Brazil

bDepartamento de Fisica Teorica,

Universidad de La Habana-10400, C. Habana, Cuba

Received February 6, 1999

A theoretical study of optical properties in narrow gap semiconductor quantum wells has been developed using an 8x8 Kane Hamiltonian. The interband transition selection rules have been obtained and a detailed description of the interband absorption using Voight and Faraday scattering congurations has been given. Interesting eects produced by the intraband admixture, such as spin-ip transitions, will be discussed. The complementation of measurements using dierent scattering congurations will be analyzed.

I Introduction

A good knowledge of the full electronic structure is an essential feature in order to get the best understanding of the optical and transport properties of a semicon-ductor heterostructure. Due to the great development reached by growth centers which use epitaxial tech-niques, the smoothness of interfaces is in the scale of one monolayer and this progress has permitted the ex-perimental observation of a number of ultra ne aspects present in these properties. The application of exter-nal electric andnor magnetic elds and internal strains

occurring due to the mismatch of lattice parameters at the interfaces, have the eect of breaking some hidden degeneracies and they may help to study as well as to explore these properties as possible optoelectronic de-vices.

The spatial connement of carriers, the strong va-lence band mixing and conduction-vava-lence band cou-pling lead to the observed complex subband dispersions with very interesting eects on the optical properties in the heterostructures, such as: large excitonic eects and oscillator strengths, special selection rules for opti-cal transitions between levels, etc.

Magnetooptical techniques have reached their most advanced sophistication when applied to semiconduc-tors with crystalline zinc-blende structure. It has al-ready been pointed that band theories developed for diamond-type semiconductors are not directly applica-ble to zinc-applica-blende-type systems [3], since the lack of

in-version symmetry in the latter type induces ak ,linear

term in the Hamiltonian which is responsible for the coupling of ladders with dierent spin orientations.

Here we will be interested in study the magne-tooptical properties in zinc-blende type CdTe-CgHgTe quantum wells as a function of the applied magnetic eld. The main interest in structures based on HgCdTe solid solutions resides in their potential applications as infrared optical modulators, lasers, detectors and emitters [4]. In these narrow-gap structures the large nonparabolicity, the very strong interband mixing, the small eective mass of carriers and the possibility to reach the zero-gap semiconductor structures provide a rich variety of novel optical and electronic properties [5][6].

In order to be able to explore properly these prop-erties one needs a good Hamiltonian model in which the intersubband couplings are considered and that is able to bring magnetic and internal strain elds within the same framework. Hence we will deal with a full 8x8 Hamiltonian,rstly proposed by Kane [7] and Luttinger [8] and later extended by Weiler [9]. The eigenstates obtained by such an approach consist in a combination of , point Bloch functions whose weights will dene the character of the corresponding state at given condi-tions. This treatment shows the realistic picture of the energy dispersions of all carriers.

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parity. It helps not only the reduction of the size of the Hamiltonianshandled as well as the time spent with the numerical calculations and the unambiguous identica-tion of admixed states which facilitates enormously the interpretation of the theoretical results.

The case of interband absorption for dierent po-larizations of the incident light as well as for dierent scattering congurations will be discussed. There are many features related to band admixture that will be analyzed. The band coupling increases, in principle, the number of allowed transitions though some of them will appear to be very weak to be experimentally detected.

Some eects like spip transitions attract special in-terest and will be discussed. The anisotropic behavior of the absorption coecient make complementary the results obtained using dierent congurations.

II Basic Hamiltonian Model

The functionsjji, which are the periodic Bloch function

at k = 0 will be numbered fromj = 1;:::;8 are order c +, hh +, l h +, so +, c ,, hh ,, l h ,, so

,, to represent the

carrier type and the signs labeling the z-component of the total angular momentumJ=L+S, respectively as

c

j1i = j

1

2;+12 >=js>" j2i = j

3

2;+32 >=, i

p

2jX+iY >" j3i = j

3

2;+12 >=, i

p

6 [jX+iY >#,2jZ>"] j4i = j

1

2;+12 >=, i

p

3 [jX+iY >#+jZ >"] (1) j5i = j

1 2;,

1

2 >= js># j6i = j

3 2;,

1 2 >=,

i

p

2jX,iY ># j7i = j

3 2;,

1 2 >=

i

p

6 [jX,iY >"+2jZ >#] j8i = j

1 2;,

1 2 >=

i

p

3 [jX,iY >",jZ>#]

For this set of Bloch functions, the fullk.p Hamiltonian can be written, in the Hermitian form, as:

H= 2 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 4 b D + el 1 p 2 P b K + , q 2 3 P b K z q 1 3 P b K

z 0 0

, q 2 3 P b K , , 1 p 3 P b K , b D + hh + q 1 3 3 b K + b K z p 6 3 b K + b K

z 0 0

b G 1 b G 2 b D + lh G + 3 q 2 3 P b K , b G 1 0 , p 6 3 b K + b K z b D + so q 1 3 P b K , b G 2 q 3 2 3 b K + b K z 0 b D , el 1 p 2 P b K , , q 2 3 P b K z q 1 3 P b K z b D , hh ,i p 6 3 b K + b K z p 3 3 b K + b K z b D , lh b G , 3 b D , so 3 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 5 (2) where the operators in each matrix element is dened in terms of the creation ( annihilation ) operatorba

+( ba ,) as b a +

jN >= p

(N+ 1)jN+ 1>; b K = p 2 Rc a ; b K z = ,i d dz; b n=ba

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b

D

el = Eg+ Ec, ,

F +1 2

d2

dz2 + s ,

F +1 2

(2bn + 1) ,

Nw+1 2

;

b

D

hh= Ev+

, 1,2 2 2 d2 dz2 ,s , 1+ 2 2

(2bn + 1) 3 2 , {+ 9 4q ; b D

lh = Ev+

, 1+2 2 2 d2 dz2 ,s (1 , 2) , b

n + 1 2 1 2 , {+ 1 4q : b D

so= 0+ Ev+ , 1 2 d2 dz2 ,s (1 , 2) , b

n +1 2 1 2 , {+ 1 4q : d

In these expressions F, P, 1, 2, 3 are the

pa-rameters associated to the eective masses and {, q,

Nw are the Luttinger and Weiler[9] parameters

asso-ciated to the gyromagnetic factor[10] of all carriers in the full k.p model. Also, s = h

eB0

cm0

measures the energy in terms of the free electron cyclotron energy !c,

1

R2 c

=,eB 0

ch

denes the cyclotron radius, Ec(v)

denes

the band oset energy for conduction(valence) band at the interface of the heterostructure and Eg(0) is the

band gap(spin-orbit energy) of the material in the quan-tum well structure.

The system treated in this work consists of a sin-gle quantum well with a magnetic eld pointing along the(001) growth direction (bz axis). In order to obtain

a complete set of Landau levels for k.pHamiltonian in

the quantum well, the following set of basis functions will be used to expand the eigenstates fj ()ig[1][2],

j ()i=jAj()ijkyi

Nj

jji: (3)

where repeated indexes represent sum over quantum

numbers, jkyi = eik

yyrepresents the free planewave

component, Nj

is the quantum oscillator functions and the corresponding Landau level. Also, the enve-lope function component jAj()i = Cij()

Fij(z)

is a combination of all classical quantum well wavefunc-tions

Fij(z)

for the pure (parabolic) carrier type-j in subband-i. In this way, the chosen basis set contains the natural symmetry properties for the quantum well structure. The Landau level index N and the subband index m of the renormalized "carrier" are included in the index . Finally, the notation used for labeling the subbands (e,(+), hh,(+), lh,(+), so,(+)) coincides

with the dominant spinor component for the carrier character at B0= 0 or, equivalently, at kk= 0.

The quantum well magneto solutions split into two blocks formed by envelope functions with even sym-metryfjAj()ig and odd symmetryfjBj()igon the

coordinate z. The spinor egeinstate is formed with mix-ture of symmetries which denes two Hilbert subspaces denoted with indexes I and II. This spinor egeinstate for each subspace has the general form:

c

j I()i= 0 B B B B B B B B B B @ jA 1

ijN,1ij1i jA

2

ijN,2ij2i jB

3

ijN,1ij3i jB

4

ijN,1ij4i jB

5

ijNij5i jB

6

ijN + 1ij6i jA

7

ijNij7i jA

8

ijNij8i 1 C C C C C C C C C C A andj I I()

i= 0 B B B B B B B B B B @ jB 1

ijN,1ij1i jB

2

ijN,2ij2i jA

3

ijN,1ij3i jA

4

ijN,1ij4i jA

5

ijNij5i jA

6

ijN + 1ij6i jB

7

ijNij7i jB

8

ijNij8i 1 C C C C C C C C C C A ; (4) d

These states no longer can be classied in symmetric or antisymmetric states, as in the parabolic model, but there is rather xed arrangement of the spatial sym-metry in each envelope function component, in order to characterize each eigenstate in the Hilbert subspace. Furthermore, the Landau levels corresponding to states of the same Hilbert subspace will never show level

cross-ings for a given B0.

III Optical Transitions

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c

D

()

b

HE,R

() E

= em0 s

2~

2!V !

ei(k

,k

+) r

hA j

0() jA

j() i

D

Nj 0

N j

ED

j0

b

e b

P

j E

; (5)

d

where irepresents the photon wavevector, b

eis the

po-larization of light, is the refractive index, V is the volume of the crystal and b

P is the momentum

opera-tor. The last term in the expression above, denes a polarization matrix j

0

;j = hj

0

j(beP)jji, for the

inci-dent light with circular polarization or in the Faraday conguration wherebe= (xbiby)=

p

2and for linear po-larizations or in the Voight conguration whereb

e= b

e

i;

i = x;y;z for the Cartesian coordinates. In this way,

the corresponding selection rules for each optical tran-sition in all congurations can be easily obtained.

For the Faraday conguration with

polariza-tions, the mixed symmetry Hilbert subspace is pre-served or, saying dierently, there will be only transi-tions between initial and nal Landau levels belonging to the same subspace I or II. These transitions satisfy the selections rules shown in Table I.

Table I: Selection rules for magnetooptical transitions in QW under Faraday conguration

(I) ,(I) (II) ,(II)

+ ,

e,

,hh

, m

e= 2;4:::;mv= 2;4::: me= 1;3:::;mv= 1;3::: N = 0 N = ,2

e+ ,hh

+ m

e= 1;3:::;mv= 1;3::: me= 2;4:::;mv= 2;4::: N = 2 N = 0

e+

,hh

, m

e= 1;3:::;mv= 2;4::: me= 2;4:::;mv= 1;3::: N =

,1 N =,3

e,

,hh

+ m

e= 2;4:::;mv= 1;3::: me= 1;3:::;mv= 2;4::: N = 3 N = 1

e+ ,lh

+(so+) m

e= 1;3:::;mv= 1;3::: me= 2;4:::;mv= 2;4::: N = 0 N = ,2

e, ,lh

,(so,) m

e= 2;4:::;mv= 2;4::: me= 1;3:::;mv= 1;3::: N = 2 N = 0

e+ ,lh

,(so,) m

e= 1;3:::;mv= 2;4::: me= 2;4:::;mv= 1;3::: N = 1 N = ,1

e, ,lh

+(so+) m

e= 2;4:::;mv= 1;3::: me= 1;3:::;mv= 2;4::: N = 1 N = ,1

For the Voight conguration where ?Bkbzk b

e(denoted in the following as v

z) we nd a dierent situation.

Here only the components lh and so of the Landau levels for the valence band will be coupled with the Landau levels of electrons in the conduction band. Thus, the allowed transitions will be possible if they involve one initial state in one of the Hilbert subspace and the nal state in the other subspace. Therefore there will be an admixture of the states or interchange of subspaces produced by the optical excitation, with the selection rules being represented in the Table II.

Table II: Selection rules for magnetooptical transitions in QW under Voight conguration

(II) ,(I) (I) ,(II) v

z

e+ ,hh

+ m

e= 2;4:::;mv= 1;3::: me= 1;3:::;mv= 2;4::: N = 1

e,

,hh

, m

e= 1;3:::;mv= 2;4::: me= 2;4:::;mv= 1;3::: N = ,1

e+ ,hh

, m

e= 2;4:::;mv= 2;4::: me= 1;3:::;mv= 1;3::: N = ,2

e, ,hh

+ m

e= 1;3:::;mv= 1;3::: me= 2;4:::;mv= 2;4::: N = 2

e+ ,lh

+(so+) m

e= 2;4:::;mv= 1;3::: me= 1;3:::;mv= 2;4::: N = ,1

e, ,lh

,(so,) m

e= 1;3:::;mv= 2;4::: me= 2;4:::;mv= 1;3::: N = 1

e+ ,lh

,(so,) m

e= 2;4:::;mv= 2;4::: me= 1;3:::;mv= 1;3::: N = 0

e, ,lh

+(so+) m

e= 1;3:::;mv= 1;3::: me= 2;4:::;mv= 2;4::: N = 0

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IV Magnetoabsorption coecient

The magnetoabsorption coecient is calculated as (!) =

Lz

e2

c~

P2 ~!m

0

X

mc; mv;Nc;Nv

jG(N

c;mc;Nv;mv) j

2

(6)

1 Im

(

Ec(Nc;mc) ,E

v(Nv;mv)

,~!,i ~!

c

,1 )

[Fc(Ec(Nc;mc)) ,F

v(Ev(Nv;mv))]

The functions

G(N;m;N;m) = jhA

j 0(N

;m) jA

j(N;m) i

j 0

;j j

2

d

are the oscillator strengths for the transitions. For the Faraday and Voigth congurations, (vz); they will

be denoted as G(z )(N

c;mc;Nv;mv), where Nc(v )

indi-cates the Landau level of the corresponding conduction (valence) subband mc(v ). Notice that a sum is running

over indexes j and j0 and the Landau levels selection

rules are already implicit. The subband Landau levels will be denoted as subband label (Nc(v );mc(v )):

For simplicity, only the strongest resonance peak, in the range of energy of our study will be denoted alpha-betically and indicating the conduction Landau level N involved in transition. As an example we show in Table III some peaks for the one Faraday conguration.

Faraday + conguration Final

(= Initial

A+(N) = G+(N;1;N

,3;2) e ,

,hh +

B+(N) = G+(N;1;N;3) e, ,hh

,

C+(N) = G+(N;2;N + 1;1) e+ ,hh

,

D+(N) = G+(N;1;N;1) e, ,hh

,

Notice that the transitions A+(N) and C+(N)

in-volve "spin-ip" from the initial to the nal states whereas B+(N) and D+(N) preserve the spin

compo-nent.

V Results and Discussion

All calculations shown here were made for a quan-tum well of Lz = 100A with the solid solution, Hg

0:8 Cd

0:2

Te/CdTe at T = 24K. We have also used

all material parameters listed by Weiler [9] for concen-trations ranging from x = 18% to x = 35% of Cd in the solid solution. At x = 2% of Cd, which is just above the semimetal-semiconductor transition, the band gap of the quantum well is Eg= 79:0 meV at T = 24K.

In Fig. 1 we show the calculated oscillator strength, as a function of the magnetic eld, for a number of op-tical transitions with +polarization. As the magnetic

eld increases, one can observe a very clear interchange of oscillator strengths (intensities) between transitions A+(3), from the subspace I, and B+(3), from the

sub-space II . Close to B0= 13 Tesla both transitions have

nearly the same strength and, for higher elds, B+(3)

oscillator strength is the dominant one and the transi-tion A+(3) almost disappears above B

0= 15Tesla. An

explanation for this fact is the following. The conduc-tion Landau level involved in both transiconduc-tions is e,(3;1)

and the valence levels involved are hh+(0;2) for A+(3)

and hh,(3;3) for B+(3) respectively. These two

va-lence levels anticross near B0 = 13 Tesla thus yielding

an interchange of character of the corresponding tran-sitions.

Figure 1. Calculated transition strengths as a function of the magnetic eld for transitions A

+( N),B

+( N),D

+( N),

andF +(

N) for Landau levels fromN = 3 toN = 5.

For sake of comparison, Fig. 2 shows the calcu-lated magnetoabsorption spectrum for the + Faraday

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we are showing the evolution of all three spectra as the eld increases. The energy broadening has been xed to 1 meV for all the levels thus, the relative height of a peak is a direct measure of the corresponding oscilla-tor strength. The thin solid line is the total spectrum resulting from the sumA

+(3) (dotted line) and B

+(3)

(thick solid line) contributions and, the information in each spectrum is complementary. On can observe that shape and position (resonance) of peaks change dras-tically with increasing magnetic eld. Its is very clear that some transitions may appear while others will

dis-appear. Our interest was focused in those transitions and energy where an interchange of character will be observed. The strongest transition in each case is ex-pected to be the one that preserves the Landau level index and the subband symmetry. Above 14 Tesla the exchange already occurred. Notice also that the "spin-ip" like transitions A

+(

N) and C

+(6) almost

disap-peared due to the overlapping of the stronger peaks

B +(3)

;D

+(8) . The existence of such anisotropy in the

magnetooptical spectrum is a direct consequence of the peculiar symmetry properties inherent into this system.

Figure 2. Theoretical absorption spectra for dierent magnetic elds using

+ polarization. The solid thin lines represent the

total absorption. The solid dark lines are the contributions from transitionsB +(

N) and the dashed lines are the contributions

from spin-ip like transitions A +(

N).

References

[1] G. E. Marques and V. A. Chitta, J. Phys. C20, L727

(1987).

[2] V. A. Chitta and G. E. Marques, Semicond. Sci. Tech-nol.3, 564 (1988).

[3] H. -R. Trebin, U. Rossler, Y. Ranvaud, Phys. Rev. B

20, 686 (1979).

[4] J. R. Meyer, C. A. Homan, and F. J. Bartoli, in Narrow-gap II-VI compounds for optoelectronic and electromagnetic applications, edited by P. Capper (Chapman & Hall, London, 1997).

[5] M. Schultz, U. Merket, A. Sonntag, U. Rossler, R. Win-kler, T. Colin, P. Helgesen, T. Skauli and S. Lovold;

Phys. Rev.B37, 14.772(1998).

[6] R. Cingolani and K. Ploog, Adv. Phys.40, 535 (1991).

[7] E. O. Kane,Semiconductor and Semimetals, Willard-son, R.K. e Beer, A.C., eds. (Academic Press, New York, 1966), vol.1, p.75.

[8] J. M. Luttinger, W. Kohn, Phys. Rev. 97, 869 (1955).

[9] M. H. Weiler, in Magnetooptical Properties of Hg1,xCdxTe Alloys, edited by R. K. Willardson and

A. C. Beer, Semiconductors and Semimetals, Vol. 16,

p.119, (Academic, New York, 1981.

Imagem

Table II: Selection rules for magnetooptical transitions in QW under Voight conguration
Figure 1. Calculated transition strengths as a function of the magnetic eld for transitions A + ( N ), B + ( N ), D + ( N ), and F + ( N ) for Landau levels from N = 3 to N = 5.
Figure 2. Theoretical absorption spectra for dierent magnetic elds using  + polarization

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