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Vol. 6, No. 2, 2003 Titulo Artigo 1

Materials Research, Vol. 6, No. 2, 2003. © 2003

Due to problems in the desktop publishing, the article

Homogeneous Gaussian Profile P

+

-Type Emitters: Updated Parameters and Metal-Grid Optimization,

by M. Cid, N. Stern*,

was printed with figures caption error. The correct figures are:

Figure 8. Efficiency, η as function of emitter sheet resistivity, R and surface doping level, Ns, considering p-type emitter solar cells.

Figure 7. Open circuit voltage, Voc as function of emitter sheet resistivity, R and surface doping level, Ns, considering p-type emit-ter solar cells.

Figure 6. Short-circuit current density, Jsc as function of emitter sheet resistivity, R and surface doping level, Ns, considering p-type emitter solar cells.

Figure 5. Emitter collection efficiency, ηc as function of emitter sheet resistivity, R and surface doping level, Ns,considering passivated surfaces.

Erratum (v. 5, n. 4, 427-432, 2002)

Imagem

Figure 8. Efficiency, η as function of emitter sheet resistivity, R ฀ and surface doping level, N s , considering p-type emitter solar cells.

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