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Resonant Tunneling of Polarized Eletrons Through

Nonmagneti III-V Semiondutor Multiple Barriers

C. MoysesAraujo, A. Ferreirada Silva,

Instituto deFsiaUniversidadeFederaldaBahia,

UFBa,Salvador,BA,Brazil

and E. A. de Andrada eSilva

InstitutoNaional dePesquisas Espaiais-INPE,

12201-900,S.J.dosCampos,SP,Brazil

Reeivedon23April,2001

Thequantumtransportofspin-polarizedeletronsarossnonmagnetiIII-Vsemiondutormultiple

barriersisonsideredtheoretially. WehavealulatedthespindependenttransmissionoeÆient,

forondutingeletronstransversinglattie-mathedIn0:53Ga0:47As/GaAs0:5Sb0:5/In0:53Ga0:47As/

InP/In

0:53 Ga

0:47

Asnanostrutureswithdierentnumbersofasymmetridoublebarriers,asa

fun-tionofeletronenergyandangleofinidene. Spin-orbitsplitresonanes,duetotheRashbaterm,

areobserved. TheenvelopefuntionapproximationandtheKanekpmodelforthebulkareused.

For anunpolarized inident beamof eletrons,we alsoobtain the spinpolarization of the

trans-mittedbeam. Theformationofspindependentminibandsofenergywithnonzerotransmissionis

observed.

Thepossibilityofeletron-spinpolarizationby

res-onanttunneling,duetotheRashbaspin-orbitoupling

in semiondutor heterostrutures, has been reently

proposed [1, 2℄. Suh spin-dependent eet is of

in-terest in the development of the soalled spintronis

[3, 4, 5℄. The material or struture paramater

op-timization of suh eet is however still missing. In

this ontribuition,wedisusstheresultsforboth

spin-dependenttransmissionoeÆientandpolarizationfor

eletronstraversingmultiplebarrierswithvarying

num-ber of asymmetri double barrier unit ells.

Spin-dependentminibandsofenergieswithnozero

transmis-sion and an inreasing maximum polarization of the

transmitted beam, for inreasing number of ells, are

obtained.

ItiswellknownthatthesoalledRashbaspin-orbit

termintheeetiveHamiltonianforeletronsonned

inasymmetriquantumwellsdependsonlyontheangle

between thegrowth diretion (bz) and the eletron ;

s

wave-vetork. Itanbewrittenas[6℄

H

SO =

d

dz

(z;E)ksin= d

dz

(z;E)k

k

: (1)

The oupling parameter as given bythe eigth band

Kanemodelreads[7℄

(z;E)= P

2

2

1

E E

v (z)

1

E E

v

(z)+(z)

(2)

where E

v

is the edge of the valene band, (z) is

thespinorbitsplittingin themaximumofthevalene

band and P is the interband momentum matrix

ele-ment. Simplespindependentboundaryonditionsfor

the envelope funtion an be derived in the presene

ofthisterm[7℄andtheproblemofthespin-dependent

quantum transportanbestudied withstandardwave

mehanisproedure (notethat for zerobias H

so =0

in eah layer of the struture and the solution there

remainsaplanewave).

Wehavethenonsideredaninomingeletronwith

energyE,wave-vetork

k

paralleltotheplanesandspin

+or (upor downwith respettoy),b andsolvedfor

thespindependenttransmissionoeÆientt

, for

dif-ferentnumberofasymmetrialdoublebarrierunitells.

Usingstandardtransfermatrixmethod thesolutionis

straightforward.Forthetwoellsase,forexample,we

mustsolvethefollowingequation

t

0

=M 2

e ikz2p

0

0 e

ikz2p

1

r

(2)

with M =B (1) e ik z w 1 0 0 e ik z w 1 B (2) e ik z w 2 0 0 e ik z w 2 (4) d and w j =d j +L j

; p=w

1 +w

2

(5)

where theB (j)

;j =1;2arethe spin-dependent

trans-fer matries orresponding to the two dierent

barri-ers,L

1

isthedistanefrombarrier1tobarrier2,while

L

2

is from barrier 2 to barrier 1, d

j

is the j th

-barrier

widthandhk

z =

p

2m

0

(E)Eosistheeletron's

mo-mentum alongthegrowthdiretion. Thetransfer

ma-trixanbeobtained diretlyfrom thespin-dependent

boundaryonditions[7℄and anbewritten as[1℄

B (j) = m 0 m j 2k z j sinh( j d j ) e ik z d j 0 0 e ik z d j P Q Q P (6) with P = 2k z j m 0 m j 1 tanh( j d j ) + i " 2k k h 2 2 ( 0 j ) 2 + k 2 z m 2 0 2 j m 2 j !# (7) and Q = 4k z k k h 2 m 0 ( 0 j )+ i " 2k k h 2 2 ( 0 j ) 2 k 2 z m 2 0 + 2 j m 2 j !# ; (8)

where, hk

k =

p

2m

0

(E)Esin is the onserved

momentum parallel to the interfaes and

j = q 2m j (E)(E j E)=h 2 +k 2 k

is the deay oeÆient of

theevanesentwaveinsidethej th

-barrier.Thewelland

barrier material parameter,fm

0 ;

0

gand fm

j ;

j g

re-spetively,areenergydependent,inaordtotheKane

model.

InFig. 1weshowtheresultsofthespindependent

transmission probability T

= t t

as a funtion of

eletronenergyintheaseofamultipledouble-barrier

struturewiththreeunitells,orrespondingtoa

stru-turewithsixbarriers.Thebandparametersusedinthe

alulationare listedin Table1. Oneansee that

in-steadofthebroadresonanesfoundforonedouble

bar-rier[1,2℄,oneanseeinthismultiplebarriersystemthe

nonzerotransmission. Itisinterestingtonotethat the

miniband width is muh largerthanthe spin-splitting

obtained with just one unit ell. For this ase with

L

1 =L

2

,asweadd moreand moreellsthestruture

losesgraduallyitsinversionasymmetryandtheoposite

spinminibandstendtooverlapompletely,

reestablish-ingthespindegenerayofthesymmetristruture.

Figure 1. Transmission oeÆient for eletrons arriving

with an angle = =4 with respet to the growth

dire-tion, and rossing three (3X) asymmetri double-barrier

unit ells of lattie-mathed In

0:53 Ga 0:47 As/InP/In 0:53 Ga 0:47 As/GaAs 0:5 Sb 0:5 /In 0:53 Ga 0:47

As. Wehaveused

L

1 =L

2

=20nm andd

1 =d

2

=3nm Theband

parame-ters usedarelisted inTable 1andthebandosets forthe

ondutionbandwere0.18eVand0.36eVforInGaAs/InP

andInGaAs/GaAsSbrespetively,whihwerereently

mea-sured[8℄.

E

g

(eV) (eV) m e (m e ) In 0:53 Ga 0:47

As 0.75 0.36 0.041

InP 1.42 0.11 0.079

GaAs

0:5 Sb

0:5

0.81 0.75 0.040

Table1. Bandparametersfor thebulkmaterialsused

in thealulation[9℄.

If one onsiders an unpolarized beam of inoming

onduting eletronsandalulates thepolarizationof

thetransmittedbeamdenedby

P(E;)= T

+

(E;) T (E;)

T

+

(E;)+T (E;)

; (9)

onends,forsmallnumberofells,asshoowninFig. 2,

(3)

Wehaveplottedin Fig. 2theobtainedpolarizationas

a funtion of eletron'senergy for transmissionaross

1,2 and 3 asymmetri double barrier unit ells. The

inreasedpolarizationwithmoreellsours,however,

atenergieswithaorrespondingdereasedtransmission

probability,betweentheinnitesuperlattieminibans.

Figure2.Polarizationofthetransmittedbeamaross

stru-tureswithone(1X),two(2X)andthree(3X)repetitionsof

the asymmetridouble-barrier unitell, with the

parame-tersasinFig.1.

In onlusion,wehave studied the spin-dependent

quantumoherenttransportofspinpolarizedeletrons

along nonmagneti III-V semiondutor multibarrier

nanostrutures. We have observed the formation of

spin dependent energy minibands with nonzero

trans-missionandaninreasingmaximumpolarizationofthe

transmittedbeamwiththenumberofells,betweenthe

minibands, whih asmentioned beome spindegenare

in the superllatie limit. Nevertheles, the interesting

situation would be that of minibands strongly

depen-general L

1 6= L

2

ase, orresponding to superllaties

withoutinversionsymmetry. Suhstudy,aswellasthe

analysis of the polarization of the reeted beam, is

workin progressandwillbepublishedelsewhere.

Aknowledgments

This work was partially supported by CNPq,

CAPES, and FAPESP. We aknowledge helpfull

dis-ussionswithProf. G.C.LaRooa.

Referenes

[1℄ E. A. de Andradae Silva and G. C. La Rooa, Phys

Rev.B59,R15583 (1999).

[2℄ A.Voskoboynikov,SShinLiuandC.P.Lee,Phys.Rev.

B58,15397 (1998).

[3℄ G.Prinz,Phys.Today,48,58(1995).

[4℄ Spin Eletronis, M. Ziese and M. J. Thornton (Eds),

(Springer,Berlin,2001).

[5℄ MihaelL.RoukesNature411,747(2001).

[6℄ YuA. Byhkovand E. I.Rashba, J.phys.C 17,6039

(1984).

[7℄ E.A.deAndradaeSilva,G.C.LaRooaandF.

Bas-sani,PhysRevB55,16293(1997).

[8℄ J.Hu, X.G. Xu,J. A.H. Stotz, S.P. Watkins, A. E.

Curzon,and M. L. W.Thewalt, N. Matine and C. R.

Bolognesi,Appl.Phys.Letters73,2799(1998).

[9℄ See for instane, Properties of lattie-mathed and

strainedIndium-Gallium-Arsenide,Ed.P.Bhattaharya

(Inspe,London,1993)andPhysialpropertiesof III-V

semiondutor ompounds, Sadao Adahi (JohnWiley

Imagem

Table 1. Band parameters for the bulk materials used
Figure 2. Polarization of the transmitted beam aross stru-

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