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Landau Levels in Two and Three-Dimensional Eletron

Gases in a Wide Paraboli Quantum Well

C.S. Sergio,G.M. Gusev, J.R.Leite,

InstitutodeFsiadaUniversidadedeS~aoPaulo,SP,Brazil

E.B. Olshanetskii, A.A. Bykov, N.T. Moshegov, A.K.Bakarov, A.I. Toropov,

Instituteof SemiondutorPhysis,Novosibirsk,Russia

D.K. Maude, O.Estibals, and J.C. Portal

GHMF,MPI-FKF/CNRS,BP-166,F-38042, Grenoble,Cedex9, Frane

Reeivedon23April,2001

Shubnikov-deHaasosillations are measured ina wideparaboliquantumwell with6 subbands

inatiltedmagnetield. Wendtwotypesofosillations. Theosillationsatlowmagnetield

are shiftedtowardshighereldswithtilted angles,and anbeattributedtothe two-dimensional

Landaustateatthebottomsubband.Thepositionoftheseondtypeosillationsdonotshiftwith

tilted anglesindiating athree-dimensional haraterof the Landaustate formedbythe highest

subbands. Thebottomlevelinthequantumwellisnotoverlappedwiththehighestsubbandsdue

totheenhanedquantumsatteringtimeofthelowestsubbands.

I. Introdution

Whenamagnetieldisappliedinabulk

semion-dutor,thefreeeletronswhih arrytheeletriharge

perform an orbital motion in the plane perpendiular

to themagneti eld diretion. This motion beomes

quantized, and equallyspaed levels(the Landau

lev-els)separatedinenergyby~!

areformed. Theenergy

ofthesystemisgivenby

E

i =

i 1

2

~!

+

~ 2

k 2

z

2m

(1)

where i=1;2;3;:::istheLandauquantumnumber,m

istheeetivemassoftheeletron,and!

=eB=mis

theylotronfrequeny.

TheeletronswithinoneLandauleavelmaybe

on-sideredtobehaveasiftheywereone-dimensional. The

densityofstates(DOS),%(E),whihintheabstaneof

amagnetildisaparabolagivenby%(E)/E 1=2

dE,

nowbeomesthesumofasetofone-dimensional

densi-tiesofstates,where%(E)/E 1=2

dE,eah startingat

thebottomofaLandaulevel. Theverysharp

singular-itiesatthebottomofeahLandaulevelistheoriginof

the Shubnikov-de Haas(SdH) eet. Inpratiethese

sharpfeaturesaresmeared outbysattering.

Whenfreepartilesareonnedtoasmallregionof

spae, eitherbyapotentialbarrier formedbyphysial

boundariesofthesample,theenergylevelsofthe

par-tiles beome quantizeddue to the wave-likebehavior

of thepartiles. Areofthesimplest exampleofthisis

asquare wellpotential. For asquare wellof widthw

the energy of the bound states are given by (innite

potentialbarrier)

E

n =

n 2

(h=w

e )

2

8m

(2)

wheren=1;2;3;:::isthesubbandindex. Weseethat

theenergyseparationinreasesfromthebottomtotop

levelswith subbandnumber.

If a magneti eld is applied perpendiular to the

two-dimensional(2D)eletrongas,thenatotal

quanti-zationoftheeletronlevelstakesplae. Theresulting

DOSonsists ofaset ofÆ-funtions separatedby~!

,

intheabseneofsattering. Whensatteringispresent

eahÆ-funtion broadensintopeakswithwidth .

Inpresenttheworkwestudyremotelydoped4000

A

paraboliquantumwell(PQW)withintermediary

den-sity, whih allow us to obtain 6 oupied subbands

(forfull ase we have8subbands oupied). In order

to haraterizethe wide paraboliwell and determine

thesubband struture wemeasure SdH osillationsin

a tilted magneti eld. The osillations ontain two

frequenies, one depends on the tilt angle, and other

does not. We attribute suh behaviour to the

three-dimensional(3D)Landaustatesformedbythe5higher

subbandand2DLandaustatesoriginatedfromthe

low-estsubband.

II. Experiment and Disussion

ThesamplesusedaretheGaAs/Al

x Ga

1 x

AsPQW

grownonundoped(100)GaAssubstrateby

(2)

10;000

A GaAsbuerlayerwith20periodsofAlAs(5

ML)GaAs(10 ML) superlattie, followed by 5000

A

Al

x Ga

1 x

As with x varying from 0:07 to 0:27. The

struture onsists of a 4000

A-wide Al

x Ga

1 x As well

in whih x was quadratially varied between x = 0,

at the enter of the well, and x = 0:19, at the edges

of the well. On eah side, the well is bounded by

Si-doped(5:010 11

m 2

)Al

0:3 Ga

0:7

Aslayers,grown

nextto spaerlayers. Thethiknessesof theundoped

Al

0:3 Ga

0:7

Asspaelayersare100

A.A100

AGaAsap

layerwasgrownas nallayeroftheestruture.

0.10

0.15

0.20

0.25

25

R

X X

(

)

B (T)

Figure 1. Low eld part of the magnetoresistane

osilla-tionsasafuntionofthemagnetield,fordierentangles

{top(=0),botton(=50){,T = 50mK.

Aftergrowth,arephotolithographiallydenedHall

barwith dimensions100X 200m. Four-terminal

re-sistane and Hall measurements were made down to

50mK in magneti eld up to 17T. The

measure-mentswereperformedwithanaurrentnotexeeding

10 8

A. Resistanewasmeasuredfordierentangles

betweentheeldandsubstrateplaneinmagnetield

usinganinsiturotationofthesample.

The mobility of the eletron gas in the well is

H

=21010 3

m 2

=Vs, and theeletron

onentra-tionisn

H

=2:510 11

m 2

{fromtheHalleet at

loweld.

Three dimensional pseudoharge is N

+

= 0:9

10 16

m 3

whih orresponds to the lassial width

of the 3D eletron gas w

e = n

H =N

+

= 2900

A. We

perform the numerial self-onsistent alulations for

PQW of width W = 4000

A, whih yields the

fol-lowing energies for the rst 6 eletri subbands (in

meV): E

1

= 0:05; E

2

= 0:21; E

3

=0:46; E

4

= 0:80;

E

5

= 1:22; E

6

= 1:73; and E

F

= 2:03meV (for

m=0:075m ).

Fig. 1 shows the low eld dependene of the SdH

osillations fordierentangles . The osillationsare

periodiin1=Bandontainonlysinglefrequeny. The

position of the osillations are shifted, as expeted or

2Deletrongas,whenmagnetieldistiltedfrom the

normal to the substrate. The magnetoresistane are

verywelldesribedbytheonventionalformulaforthe

SdHosillationsinthe2Dase: [1℄

R

xx R

0

R

0

= 4 A

T

sinhA

T exp

!

os

2E

F(2D)

~!

(3)

where A

T

= (2 2

k

B

T)=(~!

) , is a quantum

life-time, E

F(2D)

is the Fermi energyof the 2Dlevel,and

R

0

represents the lassial resistane in zero applied

eld.

0.0

0.5

1.0

1.5

2.0

50

0

0

90

0

R

x x

(

)

B (T)

Figure 2. The magnetoresistane osillations as a

fun-tion ofthe magneti eld upto 3T for dierent angles ,

T = 50mK. Arrows: positionofthe3D Landaustates.

From the omparison of the experimental SdH

os-illations(Fig. 1,=0) andEq.3weextratthe

ar-rierdensityn

s1

=0:710 11

m 2

,whihisoinident

with2Deletrondensityobtainedfromthealulation

forthelowest subband. Surprisingly,wedon't seeany

ontributionatthismagnetieldfromtheseond

sub-band.

Fig.2showsR

xx

(B)extendedtothemagnetield

up to 3T. We an see 3 osillations indiated by

ar-rows. Surprisingly, the position of these osillations

does notdepend on the tilt angle. Weattribute suh

(3)

Inrealsystemstheenergylevelswillhavenitewidths

beause of the disorder, therefore orresponding

ele-trisubbandsanoverlap. Naively,itis expetedthat

the lowest subbandswill overlaprst, whenthewidth

ofthewellinreases,beausethedistanebetween

lev-els

ij =E

j E

i

growsupasthesquareoftheindex

number. However, if the broadening of the levels

j

inreases faster than Æ

ij

=

ij

=2 the highest eletri

subbands are ollapsed to the bulk Landau states

be-fore the lowest one. Therefore thespei features of

theinvestigatedwidePQWisaoexistene3Dand2D

eletronstatesinsideofthewell. Inthetiltedeld 2D

SdHosillationsareshiftedtothehighermagnetield,

andanross3DSdHpeaks,whihdoesnotdependon

thetiltangle.

Thetheoretial expression for theSdH osillations

in 3Daseisslightlydierentfromthe2Dase: [2℄

R

xx

R

0 =

2

5

~!

2E

F(3D)

1=2

A

T

sinhA

T

(4)

exp

!

os

2E

F(3D)

~!

4

Fitstheexperimentalurvefor3DSdHosillations

to theEq. 4givethevalueE

F(3D)

=1:88meV. From

this value we nd the bulk onentration for highest

subbandsN

(3D)

=0:710 16

m 3

.

Thedensityproleforthe5highersubbandsisnot

aonstantandhasadeepminimumintheenteraswe

ansee in Fig.3. Therefore thesheet densityannot

berealulatedfromtheequationn

s =w

e N

(3D) . The

widthoftheself-onsistenteletrondensityprolesan

bedenedas:

(w

eff )

2

= 12

n

s Z

W

0

z W

2

2

n(z)dz (5)

where n(z) = P

n

si j

i (z)j

2

, and

i

is the envelope

funtion oftheeletronsintheith subband.

Thesheet density ofthe eletronsin the 5highest

subband is (n

H n

s1

) = 1:810 11

m 2

. We

ob-tain the self-onsistent value w

eff

= 2600

A and nd

bulk density for the quasi-three-dimensional subband

N

(3D) =(n

H n

s1 )=w

eff

=0:710 16

m 3

, whihis

equalthanthebulkdensitydetermined fromthe

mea-surementsofthe3DSdHosillations.

Furthermore, we alulate following the

formal-ismof the Andoand Goldtaking into aountthe

in-uene of the intersubband oupling on the sreening

and orrelation orretions. [3℄ We onsider only two

majorsatteringmehanisms{remoteandbakground

impurity sattering. The results of thelevel

broaden-ing = ~=2 are, in meV: = 0:06; = 0:08; 3

=0:18;

4

=0:21;

5

=0:25; and

6

=0:40. Our

empirialnding is that

2 <Æ

12

for 2Donnement

eetstobeobservableinbottonsubband. Weobtain

2 Æ

12

. Forhighstsubbands

j >Æ

ij

{therefore

the-sessubbandsareoverlappedandform the3Dsystem.

-2000

-1000

0

1000

2000

0

5

10

15

20

25

DE

NS

IT

Y

(

1

0

16

cm

-3

)

EN

ER

G

Y

( m

eV )

Z (Å)

0.0

0.2

0.4

0.6

0.8

1.0

Figure3.Eletrondensityproleasafuntionofpositionin

thewellfor5topsubbands(solidline)andbottomsubband

(irle). Thethikline: totaldensityprole.

III. Conlusions

Inthe presentworkwerealizethesystemwith 2D

andquasi-3Deletrongasoexistinginthesame

quan-tumwell. WeusestandardanalysisofSdHosillations

inthetiltedmagnetieldandexplorethefatthat2D

Landaustatesare sensitiveto theperpendiular

mag-neti eld. We evaluate the broadening of the levels

due to remoteand bakgroundimpurity sattering in

the presene of the intersubband sattering and nd

that the bottom subband is not overlapped with the

highestsubbands. Therefore, the2D state belongs to

the lowest subband and the 3D state, to the highest

subband.

It is known that 2D and 3D systems obey several

properties, whih areradially dierent,suh as

loal-izationinrandompotential.Webelievethatoursystem

anbeusedforomparingsuheets.

Aknowledgments

WewouldliketothankFAPESPfornanialsupport.

Referenes

[1℄T.Ando,J.Phys.So.Jpn,37,1233(1974).

[2℄ Landau Level Spetrosopy, Modern Problems in

Con-densed Matter Sienes, edited by G. Landwehr and E.I.

Rashba,NORTH-HOLLAND,Volume27.2(1991).

[3℄A Gold,Phys. Rev. B,35,723(1987);P.T.Coleridge ,

Phys. Rev. B,44,3793(1991);E.Zaremba,Phys. Rev. B,

Imagem

Fig. 1 shows the low eld dependene of the SdH
Figure 3. Eletron density prole as a funtion of position in

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