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Braz. J. Phys. vol.29 número4

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Fig. 1 shows the PLM images of compressive (  = +0 : 90%) and tensile (  = , 0 : 98%) strained  In-GaAsP/InP SQWs with dierent cap layer thicknesses.
Figure 2. PL spectra at T=12K of (a) tensile strained,
Figure 3. PL spectra at T=12K at dierent excitation power levels of tensile strained InGaAsP/InP SQWs,  = , 0 : 98%, with (a) dcap = 5nm and (b) dcap =100nm, and compressive strained InGaAsP/InP SQWs,  = +0 : 90%, with (c) dcap = 5nm and (d) dcap = 100nm.

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