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IGZO TFTs

A Comparitive Study of On-Chip Clock Generators Using a-IGZO TFTs for Flexible Electronic Systems

A Comparitive Study of On-Chip Clock Generators Using a-IGZO TFTs for Flexible Electronic Systems

... using IGZO TFTs, which includes Diode connected load, Capacitive bootstrapping (BS), Pseudo- CMOS and Pseudo-CMOS bootstrapping ...in-house IGZO TFT models under similar conditions using different ...

6

A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

... A-IGZO TFTs are gaining significant interest in next generation flexible displays [1], as they can be fabricated at low-temperature (typically around 150 ◦ C) [2][3], have high mobility (≈10 cm 2 ...other ...

6

Master of Science in Micro and Nanotechnology Engineering

Master of Science in Micro and Nanotechnology Engineering

... on TFTs: (a) Transfer curve; (b) Output characteristic ...the IGZO-TFTs used in this work ____________________ 41 Figure B-1: Design of part to adapt to bending machine to achieve bending radius of ...

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A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

... with IGZO TFTs, they have the limitation of inferior swing, very high supply voltages (≥ 15 V) and a single frequency of oscillation [2], [3], [4], ...

5

RFID logic circuit with oxide TFTs modeled by genetic algorithms

RFID logic circuit with oxide TFTs modeled by genetic algorithms

... The transistors used in this work, a-IGZO TFTs, are n-type. Hence, it is employed a diode connected load topology, this means that all the basic blocks of the logic have a diode connected load to do the ...

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Ana Paula Pinto Correia

Ana Paula Pinto Correia

... Due to the lack of a reproducible and stable p-type oxide TFT, blocks were designed using only n-type devices (IGZO TFTs). Passive elements were not also considered due to the higher device mismatch when ...

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Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

... for TFTs with thinner IGZO ...the IGZO surface through oxygen bonding and effectively neutralizing/reduc- ing the oxygen vacancies near the ...

5

Desenvolvimento de óxidos semicondutores tipo-p para aplicação em transístores de filme fino

Desenvolvimento de óxidos semicondutores tipo-p para aplicação em transístores de filme fino

... dos TFTs são normalmente constituídas por semicondutores policristalinos, a sua mobilidade é inferior à de um dispositivo que utilize um semicondutor monocristalino, pois existe uma maior dispersão dos portadores ...

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All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

... indicating TFTs having no field effect modulation colored as yellow pixels; the other colors represent defective TFT determined in test procedures before; (B) histogram based on the position map depicting the ...

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Filmes de poli (3-hexiltiofeno) (P3HT) para transistores de filmes finos orgânicos...

Filmes de poli (3-hexiltiofeno) (P3HT) para transistores de filmes finos orgânicos...

... A primeira forma de estudar a degradação de TFTs é através da irradiação controlada do semicondutor. Em 2009, experimentos de Manceau et al. [113] demonstraram a perda de radicais alquílicos e gupos tiofenos ao ...

223

Radiation Damage in Flexible TFTs and Organic Detectors

Radiation Damage in Flexible TFTs and Organic Detectors

... For the readout electronics the oxide TFTs samples used in this study were produced at CEMOP- UNINOVA and the organic TFTs were fabricated by CEA. Details about HMSO-TFTs fabrication are described in ...

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Active cellulose-based substrates for application in eletronic devices

Active cellulose-based substrates for application in eletronic devices

... of IGZO followed by metallic electrodes (source and drain) are deposited and both are patterned through the use of a shadow ...The IGZO-based FETs, using paper as gate dielectric were characterised at room ...

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Stacks of alternating conductive and non-conductive oxides studied by ellipsometry

Stacks of alternating conductive and non-conductive oxides studied by ellipsometry

... O IGZO, um óxido semicondutor transparente (TSO), apareceu recentemente como novo material para transístores de filmes finos transparentes e flexíveis. A boa condutividade elétrica, juntamente com alta ...

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Development of p-type oxide semiconductors based on tin oxide and its alloys: application to thin film transistors

Development of p-type oxide semiconductors based on tin oxide and its alloys: application to thin film transistors

... The enormous success of n-type oxides and the application of transparent conductive oxides (TCOs) as “invisible electrodes” [4], [5] and of transparent semiconductive oxides (TSOs) as active channel layers of thin-film ...

201

Advanced Electrical Characterization of Oxide TFTs Design of a Temperature Compensated Voltage Reference

Advanced Electrical Characterization of Oxide TFTs Design of a Temperature Compensated Voltage Reference

... the TFTs in question are made of amorphous Indium-Gallium-Zinc-Oxide, also known as ...Silicon TFTs, such as higher mobility and simpler fabrication ...

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O Estado organizacional dos grandes escritórios de advocacia do Brasil: dois estudos de caso

O Estado organizacional dos grandes escritórios de advocacia do Brasil: dois estudos de caso

... e TFTS apresentam um desenvolvimento organizacional compatível com o que habitualmente se pratica nas organizações relativamente a técnicas e ferramentas organizacionais contemporâneas; o fordismo não influenciou ...

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Light-induced effects on oxide based thin film transistors

Light-induced effects on oxide based thin film transistors

... these TFTs, namely on mobilities above 10 𝑐𝑚 2 𝑉 −1 𝑠 −1 , 𝑉 𝑇 𝑠 close to 0 V and on/off ratios above 10 7 ...these TFTs are not driven by the semiconductor, but by the ...that TFTs based on oxide ...

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Otimização de filmes de Parileno como Dielétrico para TFTs

Otimização de filmes de Parileno como Dielétrico para TFTs

... de TFTs híbridos flexíveis, utilizaram-se os mesmos parâmetros em cima mencionados que otimizam o parileno C como ...em TFTs é a condição segundo o método A, tal como nos ...dos TFTs, alteram o ...

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Composition ratio effect in IGZO using solution combustion synthesis for TFT applications

Composition ratio effect in IGZO using solution combustion synthesis for TFT applications

... (a-Si) TFTs [3, 4], they have low field-effect mobility [1, 2, 5–7], and do not have high trans- parency and mechanical flexibility, the fundamental pillars of emerging flexible transparent electronics [6, ...

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Thermally stimulated currents on oxide based TFTs

Thermally stimulated currents on oxide based TFTs

... The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), also known as Insulated-Gate Field-Effect Transistor (IGFET), is quite similar with Thin Film Transistors (TFTs) in terms of layers structure and ...

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