[PDF] Top 20 Braz. J. Phys. vol.32 número2A

... Brazilian Journal of Physis, provide a fair overview of the program of the meeting, overing a variety of topis.. whih are relevant for semiondutor physis at the present moment[r] ... See full document

... related to the segregation strength of indium atoms in the InGaAs layer.. A simple model shows that.[r] ... See full document

... voltage in an open iruit Coulomb drag experiment, and the indued urrent in losed iruit,.. equals the internal resistene of the iruit in whih the indution ours.[r] ... See full document

... level spaing statistis evolve to Poisson or Wigner sur-.. mise distributions in nite SLs, as a funtion of the.[r] ... See full document

... We present a theoretial study on the eletron mobility and sattering mehanism in a remotely.. doped AlGaAs wide paraboli quantum well.[r] ... See full document

... tilted angles indiating a three-dimensional harater of the Landau state formed by the highest!. subbands,[r] ... See full document

... The eetive magnetoondutivity tensor of seletively doped heterostrutures with non-sreened.. potential is evaluated for high-frequeny regime![r] ... See full document

... We have investigated the transport of arriers in GaAs using time resolved optial spetrosopy.. with pioseond resolution.[r] ... See full document

... A study of the dynamial behavior of the harge in an asymmetri double quantum well is presented.. In partiular, the time behavior of intrasub-band dipole moment whih is indued by intersub[r] ... See full document

... growth temperature is redued due to a more eÆient C inorporation and a lower inorporationg. of the passivating H atoms.[r] ... See full document

... Transport properties of a GaAs/AlAs superlattie-like double barrier diode are studied in this work.. as a funtion of the sample temperature.[r] ... See full document

... by X-ray absorption spetrosopy (XAS) and the hemial bondings were investigated by F ourier.. transform infrared (FTIR) spetrosopy.[r] ... See full document

... equilibrium ritial thikness and ativ ation energy behavior for disloation nuleation of epitaxial.. lms under tensile and ompressive strain.[r] ... See full document

... average grain size of the nano-rystals present in the. samples using the following relation:[r] ... See full document

... Pulsed laser rystallization of SiGe alloys on GaAsF. Chambouleyron 1.[r] ... See full document

... tion of boron doped rf o-sputtered amorphous hydrogenated silion.. These ranges of eletroni prop-.[r] ... See full document

... Raman spetra of (a) pure ZnSe deposited at -0.85. V; ZnSe-Fe deposited under periodially pulsed potentials[r] ... See full document

... A photon Green's funtion theory is used to inorporate Bethe- Salpeter-like many body orre-.. tions in the the omputations of nonlinear optial spetra of semiondutor quantum well lasero[r] ... See full document

... Using a simple theoretial model the width of the interfaial layer whih was estimated.. to be 7 1 monolayers.[r] ... See full document

... spin splittings resulting in a magneti-eld dependent subband struture.. Within the framework.[r] ... See full document